NVMFS5C612NLWFAFT1G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.36 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	91nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6660pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.8W (Ta), 167W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

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NVMFS5C612NLWFAFT1G is a single N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) produced by is a single N-channelMOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) produced by Infineon Technologies , which stands for Non-Volatile MOSFETs Family. It is specifically designed for use in integrated circuit designs, meaning it can be used in various digital and analog circuits.This device is specifically tailored for voltage control applications in digital switching of electrical circuits. Due to its short channel design, it presents a low on-resistance which allows higher current and therefore greater power handling capabilities.The NVMFS5C612NLWFAFT1G features a low on-state resistance for efficient power consumption. This makes it ideally suited for use in high power switching applications like motor control, power conversion and Home Appliance Control, as well as for switching of high-side applications in HVAC systems. Additionally, the device needs no gate voltage for proper operation and is insensitive to latch-up. Additionally, the NVMFS5C612NLWFAFT1G has thermal protection integrated in a configuration with negative temperature coefficient, making it suitable for use in a broad range of temperatures. The NVMFS5C612NLWFAFT1G is also able to operate over a wide supply range between 1.5 V and 5.0 V, again making it suitable for various applications.The working principle of the NVMFS5C612NLWFAFT1G is simple; a gate voltage is applied to the device, creating an electric field between two metal plates, one in the gate and another in the source. This electric field modulates the conductivity of the transistor, allowing or blocking the flow of current between the drain and the source. This is used to shunt or switch current on or off, depending on the applied voltage.The NVMFS5C612NLWFAFT1G is also designed for use in safety critical applications where fault tolerance is paramount. Its advanced design and process control makes this device highly reliable with very low RDS(on) variation, allowing for consistent and safe operation under fluctuating conditions. Overall, the NVMFS5C612NLWFAFT1G is specifically designed for fast and efficient switching in an integrated circuit and offers a wide range of options and abilities in a compact package. Its low on-resistance offers numerous efficient power handling capabilities, while its negative temperature coefficient makes it suitable for a wide range of applications. Its robust structure, high reliability and process control make it a versatile transistor, more than capable of holding its own in any circuit.

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