| Allicdata Part #: | NVMFS5C645NLT3G-ND |
| Manufacturer Part#: |
NVMFS5C645NLT3G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V DFN5 |
| More Detail: | N-Channel 60V 22A (Ta) 79W (Tc) Surface Mount 5-DF... |
| DataSheet: |  NVMFS5C645NLT3G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 79W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 50V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
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Introduction: The NVMFS5C645NLT3G is a high voltage differential metal oxide semiconductor field effect transistor (MOSFET), which is a type of transistor that provides superior switching performance and excellent on-resistance characteristics. The NVMFS5C645NLT3G is a single, power metal oxide semiconductor field effect transistor (MOSFET) designed for switching applications in both linear and switching operating modes.
Application Field: The NVMFS5C645NLT3G is ideal for high-speed, high-power switching applications. It is commonly used in DC-DC converters, switch mode power supplies, DC-AC inverters, high power motor controllers, switched-mode voltage regulators and many other high-power switching applications. The NVMFS5C645NLT3G can also be used in radio and radar systems.
Operating Principle: The NVMFS5C645NLT3G uses a three-terminal design. The NVMFS5C645NLT3G has a source terminal and a drain terminal that are connected to the load, and a third terminal, the gate terminal, that controls current flow between the source and drain terminals. The source terminal is the source of the electrons, and the drain terminal is the destination of the electrons. When an electric field is applied to the gate terminal, this induces an electrostatic force on the gate\'s electric charges, which results in a change in the effective resistance between the source and drain terminals. In the on state, the effective resistance between the source and the drain is low, allowing electrons to flow freely between the two terminals. In the off state, the effective resistance is high and current flow is blocked.
CONCLUSION
The NVMFS5C645NLT3G is a high-voltage, high-power MOSFET transistor, specifically designed to meet the needs of high-speed and high-power switching applications. Its three-terminal design and high-efficiency switching characteristics make it an excellent choice for DC-DC converters, switching power supplies, DC-AC inverters and many other power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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