Allicdata Part #: | NVMFS6B05NLWFT1G-ND |
Manufacturer Part#: |
NVMFS6B05NLWFT1G |
Price: | $ 1.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 17A 5DFN |
More Detail: | N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount... |
DataSheet: | NVMFS6B05NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.59550 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3980pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 165W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NVMFS6B05NLWFT1G is a single N-Channel FET produced by ON Semiconductor, a leading manufacturer of electronic components. The FET is a three terminal device with an N-type drain, a gate and a source. It is a voltage controlled device, meaning that the output current of the device is altered depending on the voltage applied to its gate terminal. The FET also provides some signal The frequency response important in power management applications and precise current control in wireless applications such as wireless power transfer.
In terms of its application field, the NVMFS6B05NLWFT1G is a highly versatile device and can be used in a number of different applications. It is primarily used as a power switch to control the flow of current between two points in an electronic circuit. In this context, it is often used in applications such as DC-DC converters and power supply rail switching.
In terms of its working principle, the FET features a voltage-controlled transistor which reduces its internal resistance when a positive voltage is applied to its gate terminal. This reduces the resistance between source and drain, allowing current to flow freely through the channel. The amount of current that flows is proportional to the voltage applied to the gate terminal and the resistance of the channel.
The NVMFS6B05NLWFT1G can also be used as an amplifier or as a low pass filter. When used as an amplifier, it amplifies an input signal by increasing the current flow through the transistor. When used as a low pass filter, it reduces the frequency component of a signal and acts as a shield against high frequency noise.
The FET is also very robust and able to withstand a wide range of temperatures and voltages without fail. Additionally, it has a wide range of operating frequency, making it ideal for use in a wide range of high-end consumer and industrial applications.
Overall, the NVMFS6B05NLWFT1G is a versatile and robust device manufactured by a leading component supplier. It is suitable for a variety of applications where precise control over current and signal performance is required. It is a reliable and efficient component which will provide consistent performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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