NVMFS6B05NLWFT3G Allicdata Electronics
Allicdata Part #:

NVMFS6B05NLWFT3G-ND

Manufacturer Part#:

NVMFS6B05NLWFT3G

Price: $ 1.62
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 17A 5DFN
More Detail: N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount...
DataSheet: NVMFS6B05NLWFT3G datasheetNVMFS6B05NLWFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 1.45874
Stock 1000Can Ship Immediately
$ 1.62
Specifications
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Vgs (Max): ±16V
Series: Automotive, AEC-Q101
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVMFS6B05NLWFT3G is a fabrication process of field-effect transistors (FETs) used in many analog, power, mixed-signal and radio frequency (RF) integrated circuits. It is a single, enhancement-mode vertical N-channel Metal Oxide Semiconductor (MOSFET) that works on a Silicon-on-Insulator (SOI) substrate.

The NVMFS6B05NLWFT3G transistor is one of the most complex and powerful transistors ever invented. It has a variety of applications, ranging from high-performance analog signal switches and amplifiers to power management circuits. Additionally, it’s also used in radio frequency signal processing and amplification.

In operation, the NVMFS6B05NLWFT3G works by using a gate to control the current that flows through the transistor. The gate is a thin layer of oxide material that acts as a barrier between the source and drain. The voltage that is applied to the gate can either increase or decrease the flow of current through the channel between the source and drain. This is what is known as the "enhancement mode" and it is how the transistor is used in switching and amplifying applications.

The NVMFS6B05NLWFT3G is a MOSFET transistor with an extremely low gate-source threshold voltage, which means it can operate in a wide range of analog signal switching and amplifying conditions without having to use excessive power. This makes it ideal for use in high-performance signal switching and amplifying circuits, as well as in power management and radio frequency signal processing circuits. It is also capable of operating at high frequencies, making it useful in radio frequency circuits as well.

The NVMFS6B05NLWFT3G is a versatile transistor, capable of providing high performance switching and amplifying functions in many different types of circuits. It’s low power consumption and high frequency characteristics make it ideal for a variety of applications, and its low gate-source threshold voltage makes it extremely reliable. This makes it one of the most sought after transistors in the industry today.

The specific data is subject to PDF, and the above content is for reference

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