Allicdata Part #: | NVMFS6B05NLWFT3G-ND |
Manufacturer Part#: |
NVMFS6B05NLWFT3G |
Price: | $ 1.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 17A 5DFN |
More Detail: | N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount... |
DataSheet: | NVMFS6B05NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.45874 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3980pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 165W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NVMFS6B05NLWFT3G is a fabrication process of field-effect transistors (FETs) used in many analog, power, mixed-signal and radio frequency (RF) integrated circuits. It is a single, enhancement-mode vertical N-channel Metal Oxide Semiconductor (MOSFET) that works on a Silicon-on-Insulator (SOI) substrate.
The NVMFS6B05NLWFT3G transistor is one of the most complex and powerful transistors ever invented. It has a variety of applications, ranging from high-performance analog signal switches and amplifiers to power management circuits. Additionally, it’s also used in radio frequency signal processing and amplification.
In operation, the NVMFS6B05NLWFT3G works by using a gate to control the current that flows through the transistor. The gate is a thin layer of oxide material that acts as a barrier between the source and drain. The voltage that is applied to the gate can either increase or decrease the flow of current through the channel between the source and drain. This is what is known as the "enhancement mode" and it is how the transistor is used in switching and amplifying applications.
The NVMFS6B05NLWFT3G is a MOSFET transistor with an extremely low gate-source threshold voltage, which means it can operate in a wide range of analog signal switching and amplifying conditions without having to use excessive power. This makes it ideal for use in high-performance signal switching and amplifying circuits, as well as in power management and radio frequency signal processing circuits. It is also capable of operating at high frequencies, making it useful in radio frequency circuits as well.
The NVMFS6B05NLWFT3G is a versatile transistor, capable of providing high performance switching and amplifying functions in many different types of circuits. It’s low power consumption and high frequency characteristics make it ideal for a variety of applications, and its low gate-source threshold voltage makes it extremely reliable. This makes it one of the most sought after transistors in the industry today.
The specific data is subject to PDF, and the above content is for reference
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