Allicdata Part #: | NVMFS6B05NWFT3G-ND |
Manufacturer Part#: |
NVMFS6B05NWFT3G |
Price: | $ 1.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 104A SO8FL |
More Detail: | N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount... |
DataSheet: | NVMFS6B05NWFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.48433 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 165W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NVMFS6B05NWFT3G is a Field Effect Transistor (FET) from ON Semiconductor. It is an Enhancement Mode MOSFET which has a drain current of 0.1A and a drain source voltage of 60V. This makes it an ideal choice for use in low current, high voltage applications. It has a gate to source voltage (VGS) of ±4V, which makes it suitable for use with a wide range of gate drive voltages.
The NVMFS6B05NWFT3G is a very versatile FET as it can be used in a variety of applications where switching and low power consumption are paramount. It is commonly used to drive relays, solenoids and motors, as well as for high power switching applications in power supplies and other power related systems. In addition, it can be used in audio applications, such as amplifiers, as well as logic level triggering and high voltage gate drive circuits.
The NVMFS6B05NWFT3G has a high power dissipation and can handle a drain to source voltage of up to 60V and a drain current of up to 0.1A. This makes it suitable for applications such as AC/DC switching, relays or fan control, or for high voltage gate drive circuits. As it is an enhancement mode MOSFET, it also offers a low level of power dissipation, making it a great choice for applications where power efficiency is of paramount importance.
The NVMFS6B05NWFT3G has a basic working principle similar to that of other FETs. In simple terms, it consists of two transistor sections, the source and the drain, with a gate between them. When a positive voltage is applied to the gate, it attracts electrons, creating a conductive channel between the source and the drain. This means that current can now flow through the FET and it can be used as a switch to control other components in the circuit.
The NVMFS6B05NWFT3G offers excellent performance and is suitable for use in a wide range of applications. It is an extremely reliable device and is suitable for both low and high current switching applications. It can be used in AC DC switching, power management, relays and fan control, as well as audio applications such as amplifiers and logic level triggering. Furthermore, due to its low power dissipation, it can be used in power efficient systems where power saving is paramount.
The specific data is subject to PDF, and the above content is for reference
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