Allicdata Part #: | NVMFS6B14NWFT3G-ND |
Manufacturer Part#: |
NVMFS6B14NWFT3G |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 15A SO8FL |
More Detail: | N-Channel 100V 3.8W (Ta), 94W (Tc) Surface Mount ... |
DataSheet: | NVMFS6B14NWFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.77844 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 94W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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NVMFS6B14NWFT3G is a single-component field-effect transistor that has a wide range of uses and applications. It is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is commonly used in audio and radio-frequency (RF) circuitry, and has been specially developed to remain stable while handling high input voltages and currents. This makes it well suited for use in amplifiers, voltage multipliers, and other power applications.
The NVMFS6B14NWFT3G is specially designed for power applications and is often used in circuits that require a high degree of efficiency and reliability. This is due to its high switching speeds, low on-state power dissipation, and low "on" resistance. The device also features a low drain-source capacitance, making it suitable for high frequency operation.
In addition, the NVMFS6B14NWFT3G can operate over wide voltage and temperature ranges, making it well suited for a variety of applications. This makes it a good choice for operations in extreme environments such as high altitudes, extreme temperatures, and extreme humidity.
The working principle of the NVMFS6B14NWFT3G is quite simple. It is a three-terminal device, which has a source, a gate, and a drain. When a voltage is applied to the gate terminal, the transistor will conduct, allowing current to flow between the source and drain. The current flow is directly proportional to the amount of voltage applied to the gate, making it an effective way to control and regulate the amount of current flowing through a circuit.
The NVMFS6B14NWFT3G can be used in a variety of applications, including voltage regulation, motor speed control, and as an interface between digital and analog circuits. It can also be used as a switch in circuits that require high-voltage operation and/or small amounts of current flow. Additionally, the transistor can be used for precision switching for pulse-width modulation (PWM) circuits, which are essential for the operation of many modern electronic devices.
The NVMFS6B14NWFT3G is an incredibly powerful and versatile device, and is well suited for a wide range of applications. It has a high on-state power dissipation, low drain-source capacitance, and can operate over a wide temperature and voltage range, which makes it an ideal choice for high efficiency operation in a variety of circuitry designs.
The specific data is subject to PDF, and the above content is for reference
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