| Allicdata Part #: | NVMFS6H801NWFT1G-ND |
| Manufacturer Part#: |
NVMFS6H801NWFT1G |
| Price: | $ 0.76 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRENCH 8 80V NFET |
| More Detail: | N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W ... |
| DataSheet: |  NVMFS6H801NWFT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.68452 |
| Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 166W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4120pF @ 40V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 157A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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NVMFS6H801NWFT1G, which belongs to the family of transistors, field-effect transistors (FETs) and single metal-oxide semiconductor field effect transistors (MOSFETs), is a type of device used for controlling current flow. It is such type of transistor, which can provide high impedance to noise. This makes them useful for low noise applications involving sensitive signals.
NVMFS6H801NWFT1G is one of the most widely used devices in the industry due to its excellent performance. It has a wide range of applications from RF amplifiers to high frequency oscillators. It is also widely used in analog circuits. It is designed to provide low gate-input capacitance and low on-state resistance.
The working principle of NVMFS6H801NWFT1G is quite simple. It is a three-terminal device with one gate terminal, one source, and one drain. When a voltage is applied to the gate terminal, a channel is created between the source and the drain, which allows current to flow. On the other hand, if the voltage applied to the gate terminal is reversed, the channel is closed, and no current can flow. This enables the device to be used as an electronic switch for controlling current flow.
The device can be used in RF amplifiers where it can provide high input impedance, low gate-input capacitance, and low on-state resistance. It can also be used in oscillators and voltage-controlled circuits. In addition, it can also be used in digital circuits for logic functions such as OR and NOT gates.
NVMFS6H801NWFT1G is a very versatile device. It is widely used in many applications and is an ideal choice for low noise applications. Its low gate-input capacitance and low on-state resistance makes it suitable for use in sensitive signal applications. In addition, its wide range of uses makes it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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