ZXMN10A25KTC Discrete Semiconductor Products

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The ZXMN10A25KTC is an N-channel enhancement mode field-effect transistor (FET) that is designed with a reduced number of gates and superior characteristics for ease of use and efficiency. The product is a 20 V, 10 A N-channel FET that features low gate charge and low on-resistance, making it ideal for high speed switching applications in automotive and lighting. It is available in an SO-8 package.

Features and Benefits

• 20V drain-source breakdown voltage
• High current capabilities – 10A drain current
• Low gate charge
• Low on-resistance
• SO-8 package

Application Field and Working Principle

The ZXMN10A25KTC transistor is used in a wide range of applications such as general-purpose power transistors, power switching, synchronous rectifier control, high-speed switching and automotive electronic applications. Its ability to control large currents makes it suitable for use in audio amplifiers, DC-DC converters, motor control and load switching.

The working principle of the ZXMN10A25KTC is based on the N-channel enhancement mode MOSFET. It has an on-resistance lowered by increasing the drive voltage and an easier drive due to its low gate charge characteristics. The MOSFET is typically formed by P-type and N-type layers of material that form the source and drain. An insulator layer known as a gate dielectric is placed between the gate electrode and the semiconductor channel. When a voltage is applied, a conducting layer is formed between the source and the drain. This allows an electric current to pass through the transistor.

The ZXMN10A25KTC transistor offers superior performance, reliability, and low power consumption. It is ideal for high-speed switching applications in automotive and lighting, or general-purpose power transistors. Its low on-resistance and low gate charge characteristics enable it to be used in a wide range of applications, offering improved efficiency and reduced cost.

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