ZXMN10B08E6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN10B08E6TR-ND |
Manufacturer Part#: |
ZXMN10B08E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 1.6A SOT23-6 |
More Detail: | N-Channel 100V 1.6A (Ta) 1.1W (Ta) Surface Mount S... |
DataSheet: | ZXMN10B08E6TA Datasheet/PDF |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 497pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN10B08E6TA is a low-voltage N-Channel MOSFET that is suitable for Automotive applications, offers high ESD protection, and has a low On resistance. It is part of the ZXMN10B08E6T series of MOSFETs from Diodes Incorporated. The series includes variants with voltage ratings of 12V, 24V, and 50V; feature breakdown voltages of 30V, 60V, 75V and 150V; and On-resistance (RDS(on)) values between 0.8Ω and 40Ω. It is suitable for a variety of automotive and industrial applications, including power supplies, motor controls, small signal amplifiers, and low voltage switching applications.
In operation, the ZXMN10B08E6TA MOSFET is often used in a switching configuration, whereby an input signal is applied to the gate of the MOSFET, turning it on and off. When a voltage is applied to the gate, the MOSFET allows current to flow between source and drain, creating a conductive path, and allowing the MOSFET to act as a switch. This being the case, the MOSFET works in two main states; either fully on where current is allowed to flow, or fully off where current is not allowed to flow. The resistance of the MOSFET in the on state is determined by the On-resistance parameter of the device.
The low on-resistance of the MOSFET and its overall size makes it an attractive option for automotive applications which require a minimum of power dissipation and heat in order to function. Since the current through the MOSFET is limited by its on resistance, the ZXMN10B08E6TA can handle high currents without suffering significant power dissipation. In addition, its low-voltage operation (1.8V to 12V) makes the MOSFET ideal for low-voltage switching applications, such as power supplies.
The ZXMN10B08E6TA has been designed to stand up to the stringent requirements of Automotive applications, with reliable operation under harsh conditions, including temperatures ranging from -55°C to 175°C, and up to 8 kV ESD protection.
The ZXMN10B08E6T series of MOSFETs from Diodes Incorporated offer a wide range of device options in a highly compact package, making them suitable for a variety of automotive switching applications including power supplies, motor controls, small signal amplifiers, and low voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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