ZXMN2A14FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN2A14FTR-ND |
Manufacturer Part#: |
ZXMN2A14FTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 3.4A SOT23-3 |
More Detail: | N-Channel 20V 3.4A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | ZXMN2A14FTA Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 544pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXMN2A14FTA Application Field and Working Principle
The ZXMN2A14FTA is a 30V N-channel enhancement-mode MOSFET that offers an 18.8Ω RDS(on), and a 245mΩ Max QG. This product, manufactured by ZETEX®, is ideal for switching, protection and level-shifting applications and is available in a wide range of packages including TO-220, SOT-223 and SOT-23.
The ZXMN2A14FTA is part of the Zetex S Series MOSFETs which offer a range of features designed to provide a low RDS(on), high performance and reliable operation in a wide range of applications. This series is available as both N- and P-channel versions and offers multiple voltages, gate-drive capabilities and packages. The ZXMN2A14FTA is the N-channel version designed for the 14A current rating and featuring the higher Vds (30V) across the range.
Application Field
The ZXMN2A14FTA is a high performance enhancement-mode MOSFET which is suitable for a wide range of applications. Its wide RDS(on) capability, low drain-to-source capacitance and fast switching speeds make it ideal for motor control, lighting and other power applications. It can also be used as a level shifter, general-purpose switch, high speed power switching, battery protection and EMI/RFI suppression.
Working Principle
The ZXMN2A14FTA is an enhancement-mode MOSFET, which uses an applied electric field from the gate electrode to control the flow of current between its drain and source terminals. This type of transistor is normally ‘off’ and requires a voltage to be applied to the gate in order for it to turn ‘on’. The higher the voltage on the gate, the lower the RDS(on) of the transistor and the higher the current it can handle.
This MOSFET uses Zetex\'s patented fuse technology and standard VGS (Voltage Gate-Source) and RDS(on) to provide a rugged and reliable device. Its higher Vds voltage capability makes it particularly suitable for applications that require the highest power handling capabilities such as motor control and lighting.
Conclusion
The ZXMN2A14FTA is a 30V N-channel enhancement-mode MOSFET that offers an 18.8Ω RDS(on), and a 245mΩ Max QG. This product is ideal for switching, protection and level-shifting applications and is available in a wide range of packages. Its wide RDS(on) capability, low drain-to-source capacitance and fast switching speeds make it ideal for motor control, lighting and other power applications. The ZXMN2A14FTA uses an applied electric field from the gate electrode to control the flow of current between its drain and source terminals.
The specific data is subject to PDF, and the above content is for reference
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