ZXMN3B04N8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3B04N8TR-ND |
Manufacturer Part#: |
ZXMN3B04N8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 8.9A 8-SOIC |
More Detail: | N-Channel 30V 7.2A (Ta) 2W (Ta) Surface Mount 8-SO |
DataSheet: | ZXMN3B04N8TA Datasheet/PDF |
Quantity: | 2000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2480pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 23.1nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN3B04N8TA is an N-channel 30V, 0.043A Surface Mount MOSFET (metal-oxide-semiconductor field-effect transistor). It is designed for general connecting and small-signal applications and is especially designed for use in switching applications.
MOSFET’s are unipolar devices, meaning they use a single kind of charge carriers to create their current flow. This means they’re either depleted or enhanced mode transistors, meaning they are either on or off, with no in-between. This is unlike a bipolar transistor, which uses two charge carriers to create current flow. The ZXMN3B04N8TA is a depleted mode device, meaning it is turned “on” by applying a positive voltage.
The ZXMN3B04N8TA is composed of three main components: a gate, a source, and a drain, with the source and drain being n-type metal/semiconductor contacts, and the gate being a metal electrode. The device works on a principle of electrostatic gate control. An input voltage applied to the gate (Vg) will control the output voltage (Vd) across the source and drain terminal. When Vg is less than Vd the device is in a “depleted” state, meaning that no current will flow through the device. When Vg is greater than Vd, the device is “enhanced”, meaning current will flow from the source to drain, through the MOSFET.
The ZXMN3B04N8TA is suitable for applications where low on-resistance, fast switching speed and low power dissipation is important. Common applications for this device include power switching, logic-level switching, amplification, DC/DC conversion, and UV detectors in consumer electronics and computers. It is also used for high frequency switch LM1717.
The ZXMN3B04N8TA offers a wide range of advantages over other types of MOSFETs. It is more efficient, has more reliable performance characteristics, and is easily manufacturable in large quantities. It also has a “fully-depleted” mode that allows low on-state resistance, which is ideal for high-efficiency power conversion. The device also has excellent thermal characteristics, allowing it to operate over a wide temperature range.
In conclusion, the ZXMN3B04N8TA is an excellent choice when switching and small-signal applications require low on-resistance, fast switching speed and low power dissipation. It offers many advantages over other types of MOSFETs and is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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