ZXMN3B14FTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3B14FTR-ND |
Manufacturer Part#: |
ZXMN3B14FTA |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 2.9A SOT23-3 |
More Detail: | N-Channel 30V 2.9A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | ZXMN3B14FTA Datasheet/PDF |
Quantity: | 39000 |
3000 +: | $ 0.16283 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 568pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN3B14FTA is a Dual N-channel enhancement Mode Field Effect Transistor (MOSFET) that works in the Sub-Threshold region. It is capable of offering high-performance switching characteristics with a low turn-on voltage, low RDS (on) and a current limit that matches the power supply. This MOSFET is widely used in various applications such as power management devices and switching regulators.
The gate of a field-effect transistor (FET) must be driven with a voltage from the driving circuit to change the resistance within the FET. In the case of the ZXMN3B14FTA, the gate voltage is typically in the range of 0 volts to +8 volts, depending on the application. This means that when the gate voltage is right above the threshold voltage, the transistor begins to turn on, allowing current to flow. Conversely, when the gate voltage is below the threshold voltage, the transistor turns off and no current flows.
This MOSFET is designed to operate in the sub-threshold region, which means it is capable of producing higher performance switching characteristics with lower turn-on voltage and lower RDS (on) than normal FET devices. It can also be used in applications where current limiting is required, as the current limit can be set to match the power supply.
The ZXMN3B14FTA also features an integrated gate resistor, allowing for improved performance and reliability when used in switching power supplies, motor drive circuits and other applications. This feature allows the device to operate with high voltage yet still remain protected against shorts and other conditions that may arise.
This MOSFET is ideal for use in applications that require high-performance switching and current limiting. Examples of these applications include power management devices, switching regulators, motor drivers, and low power converters. It is also suitable for use in automotive, industrial, and consumer electronic systems.
In summary, the ZXMN3B14FTA is a high-performance Dual N-channel enhancement mode MOSFET that is capable of providing superior switching characteristics with a low turn-on voltage, low RDS (on), current limiting, and integrated gate resistor. It can be used in a variety of applications such as power management devices and switching regulators, as well as in automotive, industrial, and consumer electronic systems. As such, the ZXMN3B14FTA is a great choice for engineers looking for a reliable and versatile solution for their applications.
The specific data is subject to PDF, and the above content is for reference
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