ZXMN3F30FHTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3F30FHTR-ND |
Manufacturer Part#: |
ZXMN3F30FHTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 3.8A SOT23-3 |
More Detail: | N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount S... |
DataSheet: | ZXMN3F30FHTA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 950mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 318pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 47 mOhm @ 3.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMN3F30FHTA is a single, N-channel, Enhancement Mode, Field-Effect Transistor. This component provides low-cost, high-voltage, high-current switching and is packaged in an industry-standard, three-terminal SOT-323 package. It is ideal for use in a variety of applications, including voltage regulation, switching power supplies, motor control, and inverters.
The ZXMN3F30FHTA is designed with a small footprint and low on-resistance. This feature makes it ideal for applications where a small electronic component is needed to handle large voltages and large currents. The built-in gate threshold voltage of 6V allows for high current capacity, making it well-suited for high-power switching applications.
The ZXMN3F30FHTA has an on-resistance of only 4.5 mΩ, which makes it an ideal choice for applications requiring low-power efficiency. The ZXMN3F30FHTA allows for low-resistance switching, allowing for high efficiency and low power consumption. Additionally, the on-resistance can be lowered when using higher gate voltages, allowing for greater current capacity.
The ZXMN3F30FHTA has a fast switching speed, making it well-suited for high-speed switching applications. The built-in self-protection features help prevent the device from being damaged by overvoltage or overcurrent. In addition, the ZXMN3F30FHTA has an integrated temperature-sensing circuit which can be used to reduce thermal stressing of the device.
The ZXMN3F30FHTA has an inherently simple construction, with an integrated gate and source region. This means the device can be turned on and off with a single gate voltage. Since the gate voltage is used to control the device’s on/off state, it is easy to switch the device quickly with a small gate voltage. The integrated source-gate structure also reduces manufacturing costs.
The ZXMN3F30FHTA is designed for high-frequency switching applications, such as data lines and communications systems. The device has a high-frequency cutoff of 4.5 GHz, making it ideal for use in high-frequency switching applications. The device can also handle large surge currents, making it suitable for high-power switching applications.
In summary, the ZXMN3F30FHTA is a single, N-channel, Enhancement Mode, Field-Effect Transistor that is well-suited for a variety of applications, including voltage regulation, switching power supplies, motor control, and inverters. Its small footprint and low on-resistance make it ideal for applications requiring low-power efficiency. In addition, its fast switching speed, integrated self-protection features, and integrated temperature-sensing circuits make it well-suited for high-speed switching, high-power switching, and high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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