FDD8N50NZTM Discrete Semiconductor Products

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The FDD8N50NZTM is a N-channel enhancement-mode power field-effect transistor (FET). It is part of the single MOSFET family, and is designed to operate as a high-breaker switch in various applications.

FETs, or field-effect transistors, use an electric field in order to control the current flowing through a circuit. FETs are versatile and can be used for switching, amplification, and voltage regulation, among other purposes.

The FDD8N50NZTM is one of the most common FETs used today in the market. It is specifically designed to operate as a high-breaker switch, meaning it can allow high amounts of current to pass through the circuit at low voltage.

Its maximum drain current of 25A and maximum continuous drain-source voltage of 500V make the FDD8N50NZTM ideal for use in high voltage power electronics applications. Its very low on-resistance of 18mOhm means that it has low power losses and hence high efficiency. The FDD8N50NZTM also has low gate charge, which makes it suitable for high frequency applications.

The FDD8N50NZTM is designed to be used in various applications. It is often used as the switch in inverters and service panel feeders in industrial applications. It is also used as a switch for high current drives in energy systems such as solar inverters and battery chargers. Other applications include motor controls and power factor correction circuits.

The FDD8N50NZTM has a working principle that is similar to most other FETs. It operates by using an electric field to influence the flow of current. The FET has two terminals; the gate and the drain. By applying a voltage to the gate terminal, it can be used to control the flow of current through the drain.

When a voltage is applied to the gate, it creates an electric field in the area between the gate and the drain. This electric field influences the conductivity of the channel between the gate and the drain and allows current to flow through it. The gate can be used to increase or decrease the current by changing the amount of voltage applied to it.

The FDD8N50NZTM is an excellent choice for applications that require high-braking switching, low power losses, and high efficiency. Thanks to its low on-resistance and gate charge, it is also suitable for use in high frequency switching applications. The FDD8N50NZTM is ideal for use in industrial applications, energy systems, motor controls and power factor correction circuits.

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