Allicdata Part #: | STB100NH02LT4-ND |
Manufacturer Part#: |
STB100NH02LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 24V 60A D2PAK |
More Detail: | N-Channel 24V 60A (Tc) 100W (Tc) Surface Mount D2P... |
DataSheet: | STB100NH02LT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2850pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STB100NH02LT4 is a high current, low drain-source on-state resistance, low noise, and small chip surface area enhancement-mode field effect transistor (FET). It is a single type of FETs,and its application field is large. With functions of small-signal amplification, switch control, and other functions, the STB100NH02LT4 can be used as a substitute for bipolar transistors in many applications.
In order to analyze its working principles, first it is necessary to have a clear understanding of an enhacement-mode FET. An enhancement-mode FET (EMFET) is a three terminal field effect transistor composed of three layers of materials, source, gate and drain, which are connected to the external circuit by three pins. In this way, electrons or holes from drain or source can directly pass through the gate and then be combined with the source and drain. Through the gate terminal, it can turn the FET on or off, and control the resistance between source and drain, thus realizing the purpose of amplification or switch control.
The operation principle of STB100NH02LT4 is also similar to that of an EMFET. It contains a gate, drain and source. Applying a voltage to the gate will induce a charge on the surface of the FET and reduce the resistance between source and drain, so that electrons or holes can flow freely between them. This makes the FET turn on. When the voltage of the gate is reduced to a certain degree, the resistance between the source and drain increases, and the FET turns off.
STB100NH02LT4 has a low drain-source on-state resistance and high current, which makes it a suitable choice for applications require higher current than what a normal FET can provide. It also has a low noise and small chip surface area, so it can provide great stability and performance in applications that involve high frequency and precision. Specifically, STB100NH02LT4 can be applied to different kinds of electrical devices, such as motor driver, power switching, AC/DC converter, power regulator and switching power supply, IGBT driver, inductive load switch, energy saving lamp driver, flyback driver and etc.
To summarize, STB100NH02LT4 is one of the single FETs that have many applications in different electrical devices. Its operation principle is similar to other enhancement-mode FETs, but with the advantage of low drain-source on-state resistance and low noise. Equiped with these, STB100NH02LT4 can be applied to high current, high frequency and precision switch control, as well as many other applications such as motor driver, power switching, and AC/DC converter.
The specific data is subject to PDF, and the above content is for reference
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