STB11NM60N-1

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	850pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	450 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STB11NM60N-1 is a dual-channel N-channel MOSFET which uses STMicroelectronics OptiMOS low-voltage silicon technology. The device is designed for low voltage automotive applications and it is offered in a PowerPAK SO-8 package. With its integrated ESD protection and its improved on-state resistance, it is capable of operating with a gate-source voltage of 6V.The STB11NM60N-1 is often found in automotive power management applications. Its low RDS(on) makes it suitable for use in high current applications and its low Qrr allows for fast switching rates. Moreover, its resistance variation over temperature is also low, thus making it suitable for applications demanding fast commutation times when operating over large temperature ranges.The working principle of the STB11NM60N-1 is based on the same principles as most MOSFETs. When a voltage is applied to the gate, the switch opens and allows current to pass from the source to the drain. The amount of current that can pass through is dependant on the resistance between the source and the drain (RDS(on)). This resistance is inversely proportional to the drain-source voltage (VDS). The STB11NM60N-1 offers an RDS(on) of 7.1 mΩ @ 10V and a VDS of 55V.The STB11NM60N-1 also provides improved thermal performance through its integrated ESD protection and its improved on-state resistance. These features let it operate with higher temperatures and much lower thermal resistance, thus reducing the chances of thermal runaway and improving the device’s power efficiency.In addition to its low RDS(on) and low thermal resistance, the STB11NM60N-1 also provides overvoltage protection and reverse diode protection. The overvoltage protection allows the device to limit the amount of voltage applied to the gate, thus preventing it from becoming damaged by excessive voltage, while the reverse diode protection prevents the device from being damaged by backflow current.Overall, the STB11NM60N-1 is a reliable and efficient MOSFET. Its low RDS(on), improved thermal performance, and overvoltage and reverse diode protection make it an ideal choice for automotive power management applications, such as motor control, load switching, and voltage regulation.

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