Allicdata Part #: | STB190NF04T4-ND |
Manufacturer Part#: |
STB190NF04T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 120A D2PAK |
More Detail: | N-Channel 40V 120A (Tc) 310W (Tc) Surface Mount D2... |
DataSheet: | STB190NF04T4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 5V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB190NF04T4 is a N-Channel Enhancement Mode MOSFET that is available in a TO-220 package. The device has a drain-to-source voltage (VDS) rating of 190 V and a drain current (ID) rating of 4 A. It has an insulation thickness (IS) rating of 10 mm, and a total gate charge (Qg) rating of 14 nC. It has an input capacitance (Ciss) rating of 4500 pF, and a rise and fall time (tr/tf) rating of 50/100 ns. The device also has an operating temperature range of -55°C to +175°C. The STB190NF04T4 is suitable for use in a variety of applications, including switching, audio switching, linear amplification, and power control.
The working principles of the STB190NF04T4 involve the use of gate, drain and source terminals. The gate terminal is used to control the flow of current through the source and drain terminals. When the gate voltage is below the threshold voltage, no current will flow between the source and drain terminals and the MOSFET is in the off state. When the gate voltage is above the threshold voltage, current will flow between the source and drain terminals and the MOSFET is in the on state. The drain current (ID) is proportional to the gate-to-source voltage (VGS) and the total gate charge (Qg).
The STB190NF04T4 has several advantages, such as high operating temperature range, low on-state resistance, low gate-to-drain capacitance, and fast switching speeds. These advantages make it suitable for a variety of applications, including switching, audio switching, linear amplification, and power control.
The STB190NF04T4 has been widely used in a variety of applications, such as motor drivers, power management solutions, automotive, industrial equipment, consumer electronic and medical equipment. In motor drivers, the device provides efficient switching of high power loads, while in automotive and industrial applications, the device has been used to control spikes and current surges. In consumer electronics and medical equipment, the device has been used for power control and switching applications.
In summary, the STB190NF04T4 is a N-Channel Enhancement Mode MOSFET that is available in a TO-220 package. The device has a drain-to-source voltage (VDS) rating of 190 V and a drain current (ID) rating of 4 A. It has an insulation thickness (IS) rating of 10 mm and a total gate charge (Qg) rating of 14 nC. It has an operating temperature range of -55°C to +175°C and is suitable for use in a variety of applications, including switching, audio switching, linear amplification, and power control.
The specific data is subject to PDF, and the above content is for reference
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