STB11NM80T4

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The STB11NM80T4 is a power MOSFET (metal oxide semiconductor field effect transistor) designed to be used in a variety of applications. It is a single N-channel enhancement type MOSFET, and is part of the STMicroelectronics portfolio of products designed to provide enhanced performance and higher efficiency.

This transistor offers a gate threshold voltage of 2.5V, a drain source voltage of 800V, a drain current of 11A, and an avalanche rating of 160V. It is also rated for an on-state resistance of 0.12 ohms. The STB11NM80T4 is capable of switching power reliably at up to 50kHz, making it an ideal choice for most scenarios.

The STB11NM80T4 is a standard enhancement-type MOSFET. It is found in many consumer electronics and may be used as a signal switch, amplifier, or power control element. It is also suitable for high-frequency switching and driving applications, such as pulse width modulation for motor control, and also works well for signal amplification and linear applications.

The principle of operation of an enhancement-type MOSFET is based on the electrical field effect. When a voltage is applied to the gate of the transistor, a conductive channel forms between the source and drain. This channel is known as an "inversion layer," and when it is present, current can flow from the source to the drain and back. If the voltage at the gate is increased, the inversion layer increases and the channel becomes wider, allowing more current to flow. By controlling the voltage applied to the gate, the amount of current flowing through the device can be controlled.

The STB11NM80T4 is a high-performance power MOSFET that is ideally suited for use in a variety of applications. It combines low on-resistance, with low gate threshold voltage, high drain-source voltage, high avalanche rating, and high switching speed, making it well-suited for controlling power in today\'s application circuits.

This transistor is particularly suitable for motor control applications as it can reliably switch power at up to 50 kHz. It is also an excellent choice for signal amplification and linear applications. The high on-state resistance makes it an efficient switch, and its low gate threshold voltage makes the STB11NM80T4 a good choice for controlling a variety of power stages.

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