Allicdata Part #: | SUD50NP04-77P-T4E3-ND |
Manufacturer Part#: |
SUD50NP04-77P-T4E3 |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 40V 8A TO252-4 |
More Detail: | Mosfet Array N and P-Channel, Common Drain 40V 8A ... |
DataSheet: | SUD50NP04-77P-T4E3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.40572 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel, Common Drain |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 20V |
Power - Max: | 10.8W, 24W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: | TO-252-4L |
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SUD50NP04-77P-T4E3 is a type of Transistors - FETs, MOSFETs - Arrays. It is a power device with high power switching capability, that can be used in applications such as switched-mode power supplies (SMPS), motor controls, and electronic lighting. This type of power device has a dual MOSFET Integrated Circuit (IC), which consists of two N-channel MOSFETs and a P-channel MOSFET integrated together in a common package. This integrated circuit is manufactured using advanced vertical DMOS technology, which gives it far superior performance than other power devices.
The main application field of this power device is controlling power to a wide variety of electrical components, including DC motors, solenoids, lamps, mechanical relays, actuators, and industrial process control components. It can be used in a range of applications, including industrial automation, consumer electronics, personal computer, and accessibility, among others. Its wide range of features makes it suitable for a variety of applications where precision control of large loads is required. This type of power device has a small gate capacitance and a low on-resistance, and therefore it can switch power efficiently, without generating much noise or heat.
The working principle of this power device is that the two N-channel MOSFETs are connected in parallel and the P-channel MOSFET is connected between the two N-channel MOSFETs. This triple-MOSFET structure allows a high degree of flexibility in controlling power, which allows the device to be used in a variety of applications. When the integrated circuit is powered on, the P-channel MOSFET will close, allowing the two N-channel MOSFETs to conduct current. By controlling the gate voltage, the current through the two N-channel MOSFETs can be precisely controlled, thus allowing precise control of electrical loads.
The SUD50NP04-77P-T4E3 is a Tri-MOSFET array with a high power switching capability and low on-resistance, which makes it suitable for a variety of applications, including consumer electronics and industrial process control. Its small gate capacitance, low on-resistance, and high precision make it the perfect choice for controlling electrical loads with precision.
The specific data is subject to PDF, and the above content is for reference
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SUD50N02-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V DPAKN-Cha... |
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SUD50N10-18P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 8.2A DPA... |
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SUD50N025-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 78A TO252... |
SUD50N03-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 84A TO252... |
SUD50N03-09P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50N03-11-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
SUD50N03-12P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V TO252N-Ch... |
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SUD50N10-18P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 8.2A TO2... |
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SUD50P04-23-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-23-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-40P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 6A TO252P... |
SUD50P08-26-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 80V 50A TO252... |
SUD50P10-43-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 38A TO25... |
SUD50N02-09P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A TO252... |
SUD50N03-12P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16.8A TO2... |
SUD50P04-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A TO252... |
SUD50N02-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A TO252... |
SUD50P04-08-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A DPAKP... |
SUD50P08-25L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 50A DPAKP... |
SUD50P06-15L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 50A TO252... |
SUD50P10-43L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N06-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 50A TO252... |
SUD50N03-06AP-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 90A TO252... |
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