SUD50N10-18P-E3 Allicdata Electronics
Allicdata Part #:

SUD50N10-18P-E3-ND

Manufacturer Part#:

SUD50N10-18P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 8.2A TO252
More Detail: N-Channel 100V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W...
DataSheet: SUD50N10-18P-E3 datasheetSUD50N10-18P-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SUD50N10-18P-E3 is a E-Series medium voltage N-Channel MOSFET that can be used in a variety of industrial and consumer applications. The semiconductor device is manufactured by ROHM and is rated for 60A and an operating temperature range of -55 to 150 degrees Celsius. The maximum drain-source voltage is 600V and the minimum drain-source on-state resistance is 9.8mΩ.

One of the most useful applications for the SUD50N10-18P-E3 is in high-current motor control. In motor control, the device functions as an inline switch for controlling large currents with small changes in voltage. The device can also be used in power supplies and various power management applications, such as switching and sequencing tasks. It is also suitable for use in high-reliability applications such as automotive, industrial, and medical systems.

The working principle of the SUD50N10-18P-E3 is based on the operation of a MOSFET. A MOSFET is a type of transistor that uses a small electrical signal (typically in the range of 3.3-5V) to control a large current flow (up to 60A in the case of the SUD50N10-18P-E3). This is accomplished by using the signal to modify the conductivity of the device\'s channel. When the signal voltage is applied between the gate and source terminals (G and S), the device begins to conduct and current flows from source to drain (S to D). When the signal is removed, the device goes back to its off state, stopping current flow.

The SUD50N10-18P-E3 is an ideal choice for applications that require high-current operation and high-reliability. The device can be used in a wide range of industrial and consumer applications that require both high switching speeds and accurate control. The device is highly reliable and can be used in a variety of different environments, making it a great choice for applications that require reliable operation.

The specific data is subject to PDF, and the above content is for reference

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