SUD50N02-09P-E3 Discrete Semiconductor Products

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The SUD50N02-09P-E3 is a type of power MOSFET designed for high power switching applications. It is made from high-grade silicon and has a very low on-resistance of only 0.00147 ohm in its minimum channel size. It is also capable of handling very high current pulses, up to 90 amperes. This makes it ideal for motor control, switching power supplies, LED lighting and high-pulse current applications.

The SUD50N02-09P-E3 is a low voltage N-channel enhancement mode power MOSFET, with a maximum drain-source voltage of 75V and a drain current of 100A at 25C. It is also very versatile and is used in many different applications such as DC-DC switching power supplies, thermal protection circuits and high power audio amplifiers. This MOSFET has a maximum junction temperature of 175°C and a =225°C maximum soldering temperature. It is also RoHS compliant and is lead-free.

The SUD50N02-09P-E3 is designed to provide very low on-resistance and very high current handling capabilities. This is achieved by the use of a polysilicon layer technology and low RDS(on) process. This allows for a decrease in MOSFET on-resistance and an increase in current carrying capacity.

The SUD50N02-09P-E3can be used in a variety of applications with its highly efficient switching speeds and low on-resistance performance. This cost effective device is perfect for switching applications that require a fast response such as motor control, LED lighting, power converters and power switching, among others.

The SUD50N02-09P-E3 works by using an enhancement-mode operation which is a type of MOSFET operation whereby a gate voltage controls the conductivity of the channel. When the gate voltage is below a certain threshold, current flows between the source and the drain. When the gate voltage is increased above the threshold voltage, the resistance in the channel increases and less current is allowed to flow.

In applications that require a fast response, the SUD50N02-09P-E3 is ideal. It has a turn-on voltage of 5V, a turn-off voltage of 2V and a maximum gate-to-source voltage of 10V. It is also capable of controlling a maximum drain-source voltage of up to 75V and a maximum drain current of 100A.

The SUD50N02-09P-E3 is a highly efficient and cost effective device and is perfect for applications that require high power switching. With its low on-resistance and high current handling capabilities, it is ideal for motor control, switching power supplies, LED lighting and other applications.

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