SUD50N10-18P-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD50N10-18P-GE3TR-ND |
Manufacturer Part#: |
SUD50N10-18P-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 8.2A DPAK |
More Detail: | N-Channel 100V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W... |
DataSheet: | SUD50N10-18P-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 136.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.2A (Ta), 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUD50N10-18P-GE3 Application Field and Working Principle
The SUD50N10-18P-GE3 is a series of power metal–oxide–semiconductor field effect transistor (MOSFET) commonly used in power electronics and other related fields. It is a N-channel MOSFET specifically designed for high-performance, low power applications requiring high thermal and electrical efficiency. The SUD50N10-18P-GE3 is a logic level MOSFET and as such, can switch between on and off states using only a single logic input.
In simple terms, the SUD50N10-18P-GE3 can be thought of as an electronic switch that can be turned on and off in response to a voltage applied to its Gate terminal. This voltage is usually negative with the upper limit determined by the Drain-Source breakdown voltage. When the Gate voltage is within the specified range, the MOSFET will be turned on, allowing current to flow from source-drain. When the Gate voltage is lower than the minimum voltage specified, the MOSFET will be off, blocking current from flowing from source-drain.
The SUD50N10-18P-GE3 has several key advantages over other types of MOSFETs. It has a high gate-source input-capacitance ratio which addresses noise issues caused by EMI (electromagnetic interference). It also has low gate-drain capacitance, reducing the power dissipation associated with turn-off transients. This makes the SUD50N10-18P-GE3 an attractive solution for power electronics applications where power dissipation needs to be kept to a minimum.
The SUD50N10-18P-GE3 is capable of providing high current due to its low on-resistance. It can handle high power dissipation in small packages (4.4mm x 4.4mm), allowing for manufacturers to make space-efficient designs. The SUD50N10-18P-GE3 is also well-suited for use in DC/DC converters due to its high switching speeds (1.2MHz) and low gate threshold voltage.
In terms of applications, the SUD50N10-18P-GE3 has a wide array of uses in industrial, automotive, consumer electronics and aerospace systems. It is often used to control the flow of current in power electronics circuits, such as DC/DC converters, switched-mode power supplies, motor controllers, converters and inverters. It is also an ideal choice for applications where space is at a premium, as it provide high power and current handling capabilities in a small package.
The SUD50N10-18P-GE3 is a robust and reliable MOSFET that is suitable for use in a wide variety of power electronics applications. It offers a high gate-source input-capacitance ratio, low gate-drain capacitance and can handle high current and power dissipation, making it an ideal choice for a variety of applications in the industrial, automotive, consumer electronics and aerospace fields.
The specific data is subject to PDF, and the above content is for reference
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