Allicdata Part #: | SUD50N024-09P-E3-ND |
Manufacturer Part#: |
SUD50N024-09P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 22V 49A TO252 |
More Detail: | N-Channel 22V 49A (Tc) 6.5W (Ta), 39.5W (Tc) Surfa... |
DataSheet: | SUD50N024-09P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 6.5W (Ta), 39.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Tc) |
Drain to Source Voltage (Vdss): | 22V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SUD50N024-09P-E3 is a part of the high-voltage MOSFET family. It is a high voltage, low-power, high-speed, low-on resistance MOSFET device. The device is designed for high-frequency and low-power application. It is used for power conversion in various applications, including automotive, industrial and medical.
The SUD50N024-09P-E3 is a power MOSFET with a Drain-Source voltage (VDS) of up to 50V, while the Gate-Source voltage (VGS) is 10V. This MOSFET has a low on-resistance (RDS(on)) which makes it ideal for high efficiency operation. It can operate at frequencies up to 200 kHz. This device also has a very low thermal resistance (Rth) which helps to reduce power loss in the device.
The SUD50N024-09P-E3 is an N-channel MOSFET with a single source and drain design. The device is designed for high-efficency operation. It is optimized for operating in the high current switching applications. The device has a low-threshold voltage which allows it to operate at very low voltage levels. The device also has a very low output capacitance which improves switching speed.
The SUD50N024-09P-E3 has a wide range of application areas. It can be used in power supplies, DC-DC converters, solar inverters, DC motor control applications and other applications where high current switching is required. In addition, the device can be used for control of high speed digital circuits.
The working principle of the SUD50N024-09P-E3 is based on the concept of the MOSFET as a switch. The MOSFET has four pins: the gate, source, drain and body. Applying a voltage to the gate of the device sets up a channel between the source and drain. When the gate voltage is higher than the threshold voltage (Vth), the channel is formed and current starts to flow between the source and drain. As the gate voltage is increased, the current flows more easily.
The SUD50N024-09P-E3 MOSFET is ideal for high efficiency operation due to its high voltage, low-power, high-speed, low-on resistance characteristics. It is a versatile device that can be used in a wide range of applications. It is an important device for applications where a high current switching is required and it can be used in power supplies, DC-DC converters, solar inverters, DC motor control applications and other applications.
The specific data is subject to PDF, and the above content is for reference
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