SUD50P10-43-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUD50P10-43-E3 is a single N-channel enhancement-mode field effect transistor (FET) specifically designed as a high-performance, low-cost, non-isolated amplifier. The device is made using a process developed to provide robust performance at a wide range of temperatures. This device utilizes an advanced, second-generation N-channel enhancement-mode FET process with vertical doping and a full-face metal process. This process provides excellent RF characteristics and control stability.

The SUD50P10-43-E3 is specifically suited for a wide range of applications, including inverter circuits, power amplifiers, and switching applications. For these applications, the device offers low on-resistance and low-input capacitance. Additionally, with its high reliability, robust design, and low cost, the device is well suited for use in a wide range of applications.

The primary application field for the SUD50P10-43-E3 is as a medium-power, low-cost amplifier, providing excellent stability and maximum efficiency. The device is designed to provide flexibility, allowing the user to control the voltage and current flows, adjust the output current, and adjust the gain of the device.

The SUD50P10-43-E3’s working principle is based on the principles of transistors. A transistor is essentially a current-controlled device, where the current flow is controlled by a small base current. In a N-channel enhancement-mode FET, the device is normally off and the gate-to-source voltage is driven to the threshold voltage to turn it on. Upon turning-on, the N-channel FET provides a low resistance path between its source and drain, allowing current to flow. The FET can be turned off by simply reducing its gate voltage, cutting off the current flow.

The SUD50P10-43-E3’s performance is enhanced by its vertical doping, which allows for a larger transistor surface area and thus reduces an associated parasitic parasitic capacitance from the gate to the drain. Additionally, its full-face metal process provides robust RF performance and excellent control stability. The device’s low input capacitance also reduces gate noise.

The SUD50P10-43-E3 is well suited for use in a wide range of applications, including inverter systems, power amplifiers, and switching applications. With its low-cost, robust design, and reliable performance, the device provides optimal performance and value.

The specific data is subject to PDF, and the above content is for reference