Allicdata Part #: | SUD50P06-15-GE3TR-ND |
Manufacturer Part#: |
SUD50P06-15-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 50A TO-252 |
More Detail: | P-Channel 60V 50A (Tc) 2.5W (Ta), 113W (Tc) Surfac... |
DataSheet: | SUD50P06-15-GE3 Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 113W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SUD50P06-15-GE3 is a 30-volt, 30 mΩ, N-channel, TrenchMOS power FET. The part is designed for switching applications and is manufactured using an advanced high-voltage MOSFET process.
The device features better performance than conventional planar technology and can be used in low-voltage applications such as circuit protection and computing power supplies. The device also offers good thermal stability, which can reduce system stress in high-current applications.
The SUD50P06-15-GE3 offers a wide range of applications in switching, linear, and drive circuits. Furthermore, its low on-resistance and low gate charge ratings make it suitable for a wide range of power supply applications. The device can handle high peak currents, making it suitable for pulse-width modulated (PWM) circuits.
The SUD50P06-15-GE3 is a N-channel power FET and its working principle is based on MOSFET technology. The device consists of a silicon gate electrode and an isolation dielectric layer, which is used to control the flow of current between the drain and the source. This FET has two modes of operation: enhancement and depletion. In enhancement mode, a small gate-source voltage is used to activate the device. In depletion mode, the gate-source voltage is used to deactivate the FET. The device also has a built-in diode, which protects the FET from back-voltage damage.
The SUD50P06-15-GE3 is an ideal choice for high-efficiency, low-voltage applications such as portable computing, power supplies, and automotive systems. Its wide operating range and thermal stability make it suitable for many different applications. Furthermore, its low on-resistance and gate charge values reduce system stress and allow for high switching frequencies.
The SUD50P06-15-GE3 is a 30-volt, 30 m(Ohm), N-channel power FET that is designed for switching applications. It is manufactured using advanced high-voltage MOSFET technology. The device offers a wide range of applications in switching, linear, and drive circuits. Furthermore, its low on-resistance and low gate charge ratings make it suitable for a wide range of power supply applications. The device can also handle high peak currents, making it suitable for pulse-width modulated (PWM) circuits. The device operates on MOSFET technology and is suitable for use in low-voltage applications such as circuit protection and computing power supplies. Its wide operating range, low on-resistance, and thermal stability make it ideal for use in high-efficiency, low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SUD50N03-06AP-T4E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 90A TO252... |
SUD50N06-07L-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 96A TO252... |
SUD50P04-13L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 60A TO252... |
SUD50P10-43L-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N02-04P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A DPAKN... |
SUD50N02-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V DPAKN-Cha... |
SUD50N06-07L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 96A DPAKN... |
SUD50N10-18P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 8.2A DPA... |
SUD50P04-13L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 60A DPAKP... |
SUD50N025-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 78A TO252... |
SUD50N03-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 84A TO252... |
SUD50N03-09P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50N03-11-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A TO252... |
SUD50N03-12P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N03-16P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V TO252N-Ch... |
SUD50N04-05L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 115A TO25... |
SUD50N04-16P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 9.8A TO25... |
SUD50N04-37P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 5.4A TO25... |
SUD50N10-18P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 8.2A TO2... |
SUD50N10-34P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.9A TO2... |
SUD50P04-23-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-23-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.2A TO25... |
SUD50P04-40P-T4-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 6A TO252P... |
SUD50P08-26-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 80V 50A TO252... |
SUD50P10-43-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 38A TO25... |
SUD50N02-09P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 20A TO252... |
SUD50N03-12P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 16.8A TO2... |
SUD50P04-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A TO252... |
SUD50N02-06P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A TO252... |
SUD50P04-08-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 50A DPAKP... |
SUD50P08-25L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 80V 50A DPAKP... |
SUD50P06-15L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 50A TO252... |
SUD50P10-43L-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 37.1A TO... |
SUD50N06-09L-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 50A TO252... |
SUD50N03-06AP-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 90A TO252... |
SUD50N03-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 63A TO252... |
SUD50NP04-77P-T4E3 | Vishay Silic... | 0.44 $ | 1000 | MOSFET N/P-CH 40V 8A TO25... |
SUD50N024-09P-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 22V 49A TO252... |
SUD50N04-8M8P-4GE3 | Vishay Silic... | -- | 25000 | MOSFET N-CH 40V 14A TO-25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...