SUD50N04-8M8P-4GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUD50N04-8M8P-4GE3TR-ND |
| Manufacturer Part#: |
SUD50N04-8M8P-4GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 14A TO-252 |
| More Detail: | N-Channel 40V 14A (Ta), 50A (Tc) 3.1W (Ta), 48.1W ... |
| DataSheet: |  SUD50N04-8M8P-4GE3 Datasheet/PDF |
| Quantity: | 25000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 48.1W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 50A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SUD50N04-8M8P-4GE3 is a commonly used field effect transistor (FET) primarily classified as an NMOS type. It is a vertical channel, Single N-Channel FET and integrated into a small 8-pin package making it an ideal choice for a variety of applications. This article outlines the basics of the SUD50N04-8M8P-4GE3 including its applications, features and operation.
Application Field
The SUD50N04-8M8P-4GE3 is primarily used in low-power applications where current levels are very small. It is well suited for signals switching, loading current regulations and voltage boosting applications. It can be used as a power switch in automotive, telecommunications and industrial applications. It can also be used as a load switch in digital circuits, as well as an amplifying component in various audio and video amplifiers.Features
The SUD50N04-8M8P-4GE3 has several advantages over its counterparts when compared to other MOSFETs. It has a low on-state resistance, low threshold voltage and high switching speeds. It also has a low gate capacitance, making it efficient and reliable for signal switching applications. Additionally, it has a high surge current capability making it suitable for a variety of applications.Working Principle
The operation of the SUD50N04-8M8P-4GE3 is based on the principles of field effect transistors. It operates on the same principles of a regular MOSFET, however, it employs a vertical channel instead of a horizontal one. When a positive voltage is applied to the gate terminal, it attracts positive charges to the channel allowing the current to flow through. When the voltage of the gate is lowered, the current flow is stopped and the FET is in its off-state.Conclusion
The SUD50N04-8M8P-4GE3 is an excellent choice for a variety of low-power applications. Its primary benefit lies in its low on-state resistance and high surge current capability. Additionally, it has a low gate capacitance, making it efficient and reliable for signal switching applications. Furthermore, its small package size makes it ideal for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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