SUD50N03-11-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SUD50N03-11-E3 is a type of single-level power MOSFET, which is a voltage-controlled, electronic component that helps to switch on and off the voltage in an electric circuit. It is used in high power switching, such as in computers, digital electronic devices, and industrial processes.

This MOSFET is a three-terminal device that can deal with various high voltage and current applications. It is designed in a metal-oxide-semiconductor field-effect-transistor (MOSFET) embedded in an encapsulated plastic dwelling composed of polyphthalamide (PPA). It is made of semiconductor material, usually Si, between the metal (source) and semiconductor (drain) electrodes and the gate electrode, which is insulated by a built-in dielectric layer.

The SUD50N03-11-E3 MOSFET has a low thermal resistance, reverse avalanche current capability, and a low maximum operating temperature of 125 degrees Celsius. It also has an ultra-low gate-charge rating of 71nC and a fast switching time, allowing it to deal with various load conditions.

The device features a low gate input capacitance and can be used for many applications, such as for electric power conversion, home appliance, motor control, digital communication, industrial control, and energy and power system.

The SUD50N03-11-E3 MOSFET uses the source-drain current as the control voltage between the gate and the source and is operated in the depletion mode. It uses a metal oxide surface channel to control the flow of the electrons and is known as an enhancement-mode MOSFET, which means that the device has to be initially activated by a voltage applied to the gate.

Once the gate voltage is given, the MOSFET works as a voltage operated switch in the enhancement mode, which means that the channel width will increase as the voltage increases. This increases the current between the source and drain until it reaches the maximum current rating, after which the current will remain fixed and the device will become saturated.

The device\'s working principle is such that it can be used in a variety of applications. Its reverse avalanche current capability and low power consumption make it suitable for high power switching applications. It can also be used for low voltage applications, such as those used in digital electronic devices and industrial processes.

The SUD50N03-11-E3 MOSFET has a low on-state resistance, low gate charge and low capacitance, making it suitable for use in high speed switching applications. It has a low thermal resistance, which makes it well suited for use in thermal sensitive applications.

It is a versatile device and can be used in a wide range of applications, such as power management, power conversion, industrial control, home appliance, and digital communication. Additionally, it is highly reliable, making it an ideal choice for applications that require a long life span.

The specific data is subject to PDF, and the above content is for reference