SUD50P08-25L-E3 Discrete Semiconductor Products

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The SUD50P08-25L-E3 is a single N-Channel Enhancement Mode power MOSFET of the TrenchFET technology family. This specific device is designed for power switching applications with high side supply. This device offers normally-off operation that not only will minimize power loss in any given application, but also has the added benefit of low gate drive power and the ability to operate at high frequencies.

The SUD50P08-25L-E3 is built for general purpose and high power applications and is suitable for positive and negative voltage Supplies. These Silicon-Carbide (SiC) TrenchFETs are offered in a wide range of drain source voltages and RDS(on)s.

Application Field

The SUD50P08-25L-E3 primarily provides an optimized solution for applications such as boost and buck converters, motor control, HVAC, motor-drive supplies, general purpose power supplies, as well as industrial and automotive applications. This device has a drain-to-source voltage rating (VDS) of 25V, a drain current rating (ID) of 17.2A, and a drain-source on resistance (RDS on ) of 0.0080ohm. With the capability of handling the extreme thermal, current and voltage requirements of many applications, this device is perfect for a variety of applications with need for robust and high reliability.

Working Principle

The SUD50P08-25L-E3 is an N-channel MOSFET that uses a semiconductor material such as silicon, germanium, or gallium arsenide as the base material. The operating principle of a MOSFET is very simple; it consists of four regions with two n-type and two p-type parts. The two n regions are also known as the source and the drain and the two p regions are known as the gate. By applying a voltage between the gate and the source, a conductive channel is created between the source and drain when the voltage between the gate and the source is greater than the threshold voltage (Vth). As a result, current can flow from the source to the drain and vice versa, allowing for switching. The main advantage of MOSFET technology is that very little power is needed to maintain the open or closed state of the device.

The SUD50P08-25L-E3 specifically has a dynamic RDS(ON) rating of 0.0080 ohm and very low gate-charge Qg and output capacitance Coss. This means that it can handle high current switching while dissipating very little power. It also has an operating temperature range of -55°C to +175°C and a maximum drain-source voltage of 25V, meaning it can withstand the voltage, current and temperature requirements of many applications.

The SUD50P08-25L-E3 is able to operate at high frequencies due to its low gate charge and output capacitance; allowing for high switching speed. This makes it ideal for high-speed switching applications such as Motor drive, HVAC and Automotive applications.

In conclusion, the SUD50P08-25L-E3 is an optimized single N-channel MOSFET perfect for high power applications. With its low on-resistance, high current handling capability, wide supply voltage range and operating temperature range, the SUD50P08-25L-E3 is perfect for a variety of applications. The device is specifically suited for use in applications that require high current switching and high-speed switching.

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