Allicdata Part #: | SUD50N03-09P-GE3-ND |
Manufacturer Part#: |
SUD50N03-09P-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 63A TO252 |
More Detail: | N-Channel 30V 63A (Tc) 7.5W (Ta), 65.2W (Tc) Surfa... |
DataSheet: | SUD50N03-09P-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 7.5W (Ta), 65.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUD50N03-09P-GE3 is an N-channel MOSFET (Metal-oxide semiconductor field effect transistor) in a three-pin plastic surface-mount package. It is used in a variety of power-switching applications such as in power converters and drivers for solenoid and relay circuits. It is mainly applied in the designs with large currents and high voltages due to its low on-resistance. This allows the effects of energy losses to be reduced, enabling higher efficiency in power-switching designs.
The SUD50N03-09P-GE3 is a type of MOSFET that uses voltage rather than current through its gate to switch between on- and off-states. It has a C-MOS (conductive-metal oxide semiconductor) architecture, meaning that two N-channel transistors are bonded back-to-back in the device. This structure helps reduce the on-resistance without sacrificing the switching speed. As a result, the SUD50N03-09P-GE3 can be used for switching between high voltages. In addition, it has a maximum junction temperature of +150°C, and it can support high-frequency and high-speed switching operations.
The SUD50N03-09P-GE3 is widely used in industrial applications such as motor, solenoid, and relay control. Its low on-resistance allows for higher power efficiency than in designs using similar-sized transistors. It also has high speed switching capability, which enables high power control precision and faster response times. Its integrated capacitance helps reduce switching noise and reduce the risk of false triggering when the gate is rapidly charged and discharged.
The working principle of the SUD50N03-09P-GE3 is based on the formation of a conductive channel between its source and drain by applying voltage to its gate. When a voltage is applied to its gate terminal, the channel forms and current passing between the source and drain terminals increases, leading to its on-state. When the voltage on the gate falls below the threshold voltage, then the MOSFET is in a reverse-blocking mode and the channel is blocked, preventing current from flowing. The gate capacitance of the SUD50N03-09P-GE3 also helps reduce switching noise and lowers the risk of false triggering.
In summary, the SUD50N03-09P-GE3 is a three-pin plastic surface-mount N-channel MOSFET used for high voltage and large current applications. It has a low on-resistance and high speed switching capability, and its integrated capacitance helps reduce switching noise. The MOSFET operates by having a voltage applied to its gate to control the current passing between its source and drain terminals. The SUD50N03-09P-GE3 is widely used in motor, solenoid, and relay control applications due to its low on-resistance, high power efficiency, and fast switching times.
The specific data is subject to PDF, and the above content is for reference
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