SUD50P04-08-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD50P04-08-GE3TR-ND |
Manufacturer Part#: |
SUD50P04-08-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 50A DPAK |
More Detail: | P-Channel 40V 50A (Tc) 2.5W (Ta), 73.5W (Tc) Surfa... |
DataSheet: | SUD50P04-08-GE3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 73.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5380pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 159nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.1 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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The SUD50P04-08-GE3 is a type of FET (field-effect transistor) or MOSFET (metal-oxide-semiconductor field-effect transistor). It is a single transistor-type device used for a variety of applications. It is a compact, high-performance switching device used for various local and remote-control systems and switching applications. This article will discuss the applications of the SUD50P04-08-GE3 and its working principle.The SUD50P04-08-GE3 has a variety of applications. It is mainly used in switching applications such as high-frequency switching, on/off control and interlocking circuits. It is also suitable for high-precision switching, including high-speed switching of digital signals, such as for digital TVs and monitors, and can be used in audio systems, communications equipment and instrumentation. It is also suitable for controlling voltage in situations where a low-impedance field-effect transistor is needed.The SUD50P04-08-GE3 is a single transistor of the MOSFET type. It uses the gate-electrode voltage to control the sources-drain current, providing an extremely fast and efficient switch. When the gate-electrode voltage is increased, the sources-drain current increases; when the gate-electrode voltage is decreased, the sources-drain current decreases. This means that the SUD50P04-08-GE3 can switch from "on" to "off" and from "off" to "on" with high speed and accuracy.The SUD50P04-08-GE3 is designed for high-performance and high-frequency switching. It can handle high currents and voltages, providing a fast and efficient switch for any application. The device is protected from hot switching and is designed for high power-handling capacity and low noise. The lifespan of the SUD50P04-08-GE3 is long and it has a very low ON-resistance.In summary, the SUD50P04-08-GE3 is a compact and high-performance switching device suitable for different applications around the world. It offers a fast and efficient switch with high power-handling capacity and excellent noise protection. Its gate-electrode voltage controls the sources-drain current, providing a reliable and efficient control solution for remote control systems, audio systems, and instrumentation.
The specific data is subject to PDF, and the above content is for reference
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