SUD50P10-43L-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	8.3W (Ta), 136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4600pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	43 mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	37.1A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SUD50P10-43L-GE3 is a type of field-effect transistor (FET). It belongs to a class of transistors known as MOSFETs, which stands for “metal–oxide–semiconductor field-effect transistors”. MOSFETs are two-terminal, unipolar electronic components used for amplifying or switching electronic signals in various applications such as switching the DUT (Device Under Test) in a test system or to create transistor-level circuits in PCB design.

Working Principle

The SUD50P10-43L-GE3 is a vertical power MOSFET, built as a single, insulated gate, N-Channel FET device. It has a Vds rating of 50 volts, a total Gate Charge of 10 micro-coulombs, a Drain-Source On-resistance rating of 43 milliohms, and a Maximum Junction Temperature rating of 150°C.To connect an insulated gate field-effect transistor properly, a gate driver circuit is required. The gate driver supplies the gate voltage necessary to drive the FET, in order to turn the device on. The signal driving the gate must have a high-impedance source, so that the signal can be applied without being impacted by the gate-drain and gate-source capacitances, which can result in a delay otherwise.When the gate signal is driven high, the MOSFET turns on and allows current to pass from the drain to the source. The greater the gate signal, the lower the Voltage Drop across the drain and source, and thus, the higher the current that can pass through. When the gate signal is driven low, the MOSFET turns off and does not conduct current.

Application Field

The SUD50P10-43L-GE3 is designed for use in various applications. It is commonly used in switching and Class D amplifier applications to control power dissipation, reduce EMI/RFI noise, replace mechanical relays, protect against over-voltage conditions, and provide high efficiency designs.In motor control applications, the SUD50P10-43L-GE3 allows precise, high frequency control of the motor speed, allowing for maximum efficiency and power efficiency ratings, as the motor will only run at the speed needed. It can also be used to control the direction of the rotation and to implement speed ramps.In automotive applications, such as powertrain, engine management, and thermostatic air conditioning systems, the SUD50P10-43L-GE3 can be used to improve the system efficiency, while maintaining a high level of safety and reliability.Additionally, the SUD50P10-43L-GE3 can be used to control power electronics in renewable energy applications and for switching in high-voltage DC-DC converters.

Conclusion

The SUD50P10-43L-GE3 is a single, vertical power MOSFET transistor designed for use in various applications, such as motor control, automotive, and power electronics. It has a Vds rating of 50 volts, a total Gate Charge of 10 micro-coulombs, a Drain-Source On-resistance rating of 43 milliohms, and a Maximum Junction Temperature rating of 150°C. To connect properly, a gate driver circuit is required to provide the gate voltage necessary to turn the device on. The SUD50P10-43L-GE3 allows for precise, high frequency control of power electronics and other devices, while providing a high level of safety and reliability.

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