Allicdata Part #: | SUD50N025-06P-E3-ND |
Manufacturer Part#: |
SUD50N025-06P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 25V 78A TO252 |
More Detail: | N-Channel 25V 78A (Tc) 10.7W (Ta), 65W (Tc) Surfac... |
DataSheet: | SUD50N025-06P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 10.7W (Ta), 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2490pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 78A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUD50N025-06P-E3 is a type of field-effect transistor (FET) that can be used for a variety of applications. It is a single-pole, single-throw (SPST) FET, meaning it can be used to control one current path. The FET is also known as an enhancement-mode MOSFET, which stands for metal-oxide semiconductor field-effect transistor.
In terms of its physical characteristics, the SUD50N025-06P-E3 has a drain current rating of 25 amp, a gain of 110 dB, and a power dissipation of 175 watts. It also has a gate to drain voltage as high as 1500 volts, giving it excellent resistance to high voltages. Its gate source voltage is also relatively low, at a maximum of 2 volts.
In terms of its application field, the SUD50N025-06P-E3 can be used in a variety of applications where control of the current is required. Some of these include motor control, switching, power converters, and motor driver circuits. As it is a FET, it can also be used to amplify signals, and this is sometimes used in audio applications.
As for its working principle, a FET works by using an electric field to control the flow of electrons between the source and drain terminals. It does this by allowing the electrons to pass through an insulated layer of metal between the two terminals. With the SUD50N025-06P-E3, this layer is a semiconductor material that can be negative or positive depending on the voltage applied to the gate. When the gate voltage is negative, electrons are repelled from the source and encouraged to travel to the drain. When the gate voltage is positive, the electrons are allowed to flow freely through the metal layer.
The SUD50N025-06P-E3 can be used in a variety of applications due to its combination of physical characteristics and working principle. It is an ideal component for applications where an amplified signal is required, or for controlling currents in motor control and power converter circuits. Its gate to drain voltage of 1500 volts gives it excellent resistance to high voltages, making it useful for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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