SUD50N03-06AP-T4E3 Allicdata Electronics
Allicdata Part #:

SUD50N03-06AP-T4E3-ND

Manufacturer Part#:

SUD50N03-06AP-T4E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 90A TO252
More Detail: N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface ...
DataSheet: SUD50N03-06AP-T4E3 datasheetSUD50N03-06AP-T4E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V
FET Feature: --
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The SUD50N03-06AP-T4E3 is a Power MOSFET that is designed to provide superior performance when used in applications that require high power switching. It is an n-channel enhancement mode Power MOSFET and can be used in digital applications such as relay drivers, motor controllers, voltage regulators, and audio power amplifiers. This device is matched for improved RDS(on), reducing turn-on times and switching losses. Its typical drain current rating is 50 A and its typical Drain-to-Source Voltage rating is 60 V.

The SUD50N03-06AP-T4E3 MOSFET is well suited for high power switching applications due to its high frequency operation and low on-state resistance. It operates at frequencies up to 10 MHz and has a maximum operating voltage of 60V. It features a high thermal resistance of 3.2 K/W and a low supply current of 0.8 mA. Its on-state resistance is very low at 10 mΩ, providing good load current switching performance. Its maximum drain current of 50A is also a good performance factor for this device.

The working principle of a Power MOSFET is based on the movement of charges between two layers of oxide material. The oxide layers (known as the Gate oxide) act as a dielectric between the two layers allowing electrons to move between them. An electric field is created on the Gate oxide when a voltage is applied, resulting in electrons moving from one layer to the other. As the electric field becomes stronger, more electrons are pushed across the Gate oxide resulting in a larger current flow.

The operation of the SUD50N03-06AP-T4E3 Power MOSFET is similar to other MOSFETs. When a gate voltage is applied, an electric field is created on the gate oxide which pulls electrons from the drain region. This results in an increasing current flow from the drain to the source. When the gate voltage is removed, the drain current decreases and the MOSFET is effectively turned off.

The SUD50N03-06AP-T4E3 Power MOSFET is well suited for a range of high power switching applications requiring fast switching speeds and low on-state resistance. It is ideal for use in motor controllers, voltage regulators, audio power amplifiers, relay drivers, and a range of other switching applications. It features a low on-state resistance along with a high thermal resistance and maximum drain current rating of 50 A making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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