SUD50P06-15L-T4-E3 Allicdata Electronics
Allicdata Part #:

SUD50P06-15L-T4-E3-ND

Manufacturer Part#:

SUD50P06-15L-T4-E3

Price: $ 1.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 50A TO252
More Detail: P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface ...
DataSheet: SUD50P06-15L-T4-E3 datasheetSUD50P06-15L-T4-E3 Datasheet/PDF
Quantity: 1000
2500 +: $ 1.02140
Stock 1000Can Ship Immediately
$ 1.13
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
FET Feature: --
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The SUD50P06-15L-T4-E3 is a N-channel enhancement mode MOSFET, designed especially for applications such as DC-DC converters, portable devices, and load switches. It is most commonly used in DC-DC converters, power supplies, and other similar applications.

The SUD50P06-15L-T4-E3 MOSFET is made of a silicon based semiconductor material. The acronym MOSFET stands for metal-oxide semiconductor field-effect transistor, which is a type of transistor that is used to control current between two points on a circuit board. Unlike other types of transistors, the MOSFET uses an electrical field to control the current flow through the device, rather than a base voltage.

The SUD50P06-15L-T4-E3 MOSFET has an operating temperature range of -55°C to +150°C and is rated for a maximum drain-source breakdown voltage (BVdss) of 60 V. It has a maximum drain current (ID) of 18A and a gate-source voltage (VGS) of 20V. It can also withstand a maximum power dissipation of 2.1 W.

The working principle of a MOSFET is relatively simple. When the MOSFET is turned on, a voltage is applied to the gate terminal. As the voltage increases, a channel of electrons is created between the drain and source terminals. This channel allows a current to flow from the drain to the source terminal, thus allowing the MOSFET to control the current. This is the fundamental working principle of the SUD50P06-15L-T4-E3 MOSFET.

The SUD50P06-15L-T4-E3 MOSFET is most commonly used in DC-DC converters, power supplies, and other similar applications. DC-DC converters are used to convert the voltage of a DC (Direct Current) power source to another voltage, usually a lower voltage. This is often used in portable devices, such as laptops and mobile phones, to reduce the power consumption of individual components by providing lower voltage. Similarly, MOSFETs are also commonly used in power supplies for the same purpose. They are also used as switch mode power supplies, which use MOSFETs to control the output current.

In addition, the SUD50P06-15L-T4-E3 MOSFET is also used in many other applications, such as load switches and small-signal amplifiers. Load switches are commonly used to control the power supply to various devices and components, while small-signal amplifiers are used to amplify small signals for audio applications and other similar applications. The low on-resistance, low gate charge, and low output capacitance make the SUD50P06-15L-T4-E3 an ideal choice for these types of applications.

Overall, the SUD50P06-15L-T4-E3 MOSFET is a highly versatile and reliable semiconductor device that can be used in many different applications. Its low on-resistance, low gate charge, and low output capacitance make it ideal for DC-DC converters, power supplies, load switches, small-signal amplifiers, and many other applications. The simple working principle of a MOSFET also makes it ideal for use in computer systems and other electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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