SUD50N02-04P-E3 Discrete Semiconductor Products

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The SUD50N02-04P-E3 is a single N-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is used in a variety of applications, such as power supplies, DC-DC converters, and linear functions like driving motors and other loads. The device can also be used to switch on or off heavy load currents, and can be used to amplify an input signal.

The SUD50N02-04P-E3 is an N-Channel MOSFET with an insulated gate. This means that a small voltage applied to the gate terminal controls the amount of current flowing from source to drain. The gate terminal works like a field surrounding the channel and acts as a barrier to limit current flow.

The working principle of the SUD50N02-04P-E3 is based on the physical phenomena of electron tunneling. In the MOSFET structure, electrons flowing between the source and the drain are affected by the electric field created by the insulated gate voltage. In a pinch-off regime, when the gate voltage is close to zero volts, almost no current crosses the channel and the device behaves like an open switch. When the gate voltage increases, the electron flow increases and the MOSFET acts as a closed switch.

The SUD50N02-04P-E3 is suitable for a wide range of applications. It is particularly suitable for applications where low-power switching is needed. It is used in DC-DC converters, power supplies, and other linear functions such as driving motors and other loads. It can be used as a switch to turn on or off heavy load currents and can be used to amplify an input signal.

In addition, the SUD50N02-04P-E3 can be used in noise-sensitive designs, since it has a low input capacitance and is immune to electrostatic discharge (ESD). Moreover, the device is also suitable for high temperature applications due to its high temperature capability and low on-resistance.

In summary, the SUD50N02-04P-E3 is an N-Channel MOSFET used in a variety of applications, such as power supplies and DC-DC converters. The device is based on the physical phenomena of electron tunneling, and it is suitable for low-power switching, noise-sensitive designs, and high-temperature applications.

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