SUD50N04-16P-E3

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SUD50N04-16P-E3 is a type of transistor that falls into the category of field effect transistors, or FETs. It is a single element integrated circuit, or IC, and is a type of metal-oxide semiconductor field-effect transistor (MOSFET) that utilizes a low gate threshold voltage to make it easier to switch an electrical current. The SUD50N04-16P-E3 is designed to operate at a maximum power dissipation of 3 watts, making it a dependable and durable device for a variety of different applications.

The SUD50N04-16P-E3 is a device that is suitable for use in general digital circuits, voltage waveform circuits, and in low impedance output stages, such as in power amplifiers and audio devices. As such, it is an ideal device for a range of applications, including but not limited to, general purpose and low power integrated circuits, as well as amplifiers, connectors, and other equipment. Additionally, the SUD50N04-16P-E3 can be used in some portable, video, and battery-powered applications.

The workings of the SUD50N04-16P-E3 are based on the principle of metal-oxide and semiconductor junction. The device consists of a metal oxide layer between a semiconductor and a gate voltage, which creates a channel through which current flows when a suitable voltage is applied to the gate. This type of transistor is known as an enhancement mode because the voltage applied to the gate increases the current passing through it. This can be contrasted with a depletion mode transistor which works by decreasing the amount of current when a suitable voltage is applied to the gate.

SUD50N04-16P-E3 devices are designed for differential applications and feature two separate gates for positive and negative input signals. The inputs are monitored separately to ensure that the device operates correctly at both input voltages. The SUD50N04-16P-E3 also features a series resistance of up to 6 ohms, which helps regulate the amount of current passing through the device.

In terms of power dissipation, the SUD50N04-16P-E3 is rated for a continuous drain-source voltage of 50 volts, and a maximum peak drain-source voltage of 100 volts. It has a maximum drain current of 4 amps, and a maximum drain-source on-state resistance of 50 milliohms. The SUD50N04-16P-E3 also features a gate source breakdown voltage of 12 volts, a drain-source breakdown voltage of 70 volts, a maximum gate-source voltage of 12 volts, and a maximum gage-drain diode forward voltage of 1.7 volts.

Overall, the SUD50N04-16P-E3 is an ideal device for a range of applications where a low gate threshold voltage is required. With its low power consumption, its ability to operate at different input voltages, and its high reliability and durability, the SUD50N04-16P-E3 is a highly versatile and dependable device.

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