SUD50P08-26-E3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	8.3W (Ta), 136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5160pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	155nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 12.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SUD50P08-26-E3 is an all-in-one, high voltage, advanced power Field-effect Transistor (FET), especially designed for providing effective current in various applications. This is a single-channel, N-channel enhancement mode MOSFET which features a relatively low-resistance Drain-Source on-state characteristic. This device is specifically suitable for high-density surface mounting applications that require a high-efficiency power supply.The SUD50P08-26-E3 has a breakdown voltage range of 30V to 26V with its built-in drain-source resistance of 4 ohms. Its gate drive voltage is 4V with a low maximum current of 1.2A. It is designed to provide an excellent power supply efficiency and low power consumption. Its Gate-Source voltage characteristics allow for fast switching and application of a high level of power supply stability.The SUD50P08-26-E3 is capable of handling an operating temperature range of -55 degrees Celsius to 175-degrees Celsius with a maximum junction temperature of 150 degrees Celsius. It also features on-resistance variation of 10% over its entire working range, allowing for proper and efficient current transfer. In addition, the device consists of excellent input and output pins which allow a proper and efficient current path. When it comes to its application field, the SUD50P08-26-E3 is an ideal choice for applications ranging from personal computers and servers to LCD televisions and washing machines. This device can also be used in a wide variety of applications such as LED lighting and solar energy applications. It can also be used in power supply circuitry, power management, motor control, and in regulatory systems.The SUD50P08-26-E3 works on the principle of controlling current through a resistor. When a certain voltage (VGS) is applied to the gate-source of this device, it acts as a resistive barrier, hence controlling the current flow from the source to the drain. This process is made possible because of the presence of a metal oxide semiconductor layer which is placed between the gate and the source. This metal oxide layer acts like an insulator and helps to regulate the flow of electrons in the desired direction. This results in a smooth flow of current through the device, which is determined by the gate-source voltage (VGS).In summary, the SUD50P08-26-E3 is an efficient and reliable single-channel, N-channel enhancement mode MOSFET which features a relatively low-resistance Drain-Source on-state characteristic, making it an ideal choice for high-density surface mounting and useful for a range of applications such as personal computers, servers, LCD televisions and washing machines, LED lighting and solar energy, power supply circuitry and power management, motor control and in regulatory systems.

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