SUD50N03-09P-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD50N03-09P-E3TR-ND |
Manufacturer Part#: |
SUD50N03-09P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 63A TO252 |
More Detail: | N-Channel 30V 63A (Tc) 7.5W (Ta), 65.2W (Tc) Surfa... |
DataSheet: | SUD50N03-09P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 7.5W (Ta), 65.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUD50N03-09P-E3 is a small-signal single N-Channel MOSFET. It can operate at high speed and in high temperatures, making it a great choice for use in many applications. This device has a wide range of uses, from automotive, industrial, and commercial applications. In this article, we will discuss the application field and working principle of the SUD50N03-09P-E3.
Application Field
The SUD50N03-09P-E3 has a maximum drain-source voltage of 50V, a maximum drain current of 6A, and a maximum power dissipation of 735mW. This makes it suitable for a wide range of applications, such as:
- Automotive - power functions like window motors, high/low beams, ABS brakes, and door locks.
- Industrial - HVAC systems and motor control.
- Commercial - LED lighting, surveillance cameras, and interface boards.
Working Principle
The SUD50N03-09P-E3 is a single N-Channel MOSFET, which means it uses the MOSFET (metal-oxide semiconductor field-effect transistor) structure. This type of transistor utilizes an electric field to drive current through a channel between the source and the drain. The current flow is controlled by a gate terminal, which can be found at the center of the device. This gate terminal can be manipulated either by a voltage, allowing for an increase in the current flow. Conversely, the voltage can be lowered to reduce the current flow.
The SUD50N03-09P-E3 specifically uses a "superjunction" design, which allows for a higher current capacity. By utilizing a superjunction structure, it can have an on-resistance of just 0.0073 ohms and a total formation, resulting in a maximum current of 6A. Furthermore, the SUD50N03-09P-E3 has a significantly higher switching speed, making it ideal for use in high speed applications.
Conclusion
In conclusion, the SUD50N03-09P-E3 single N-Channel MOSFET is an excellent choice for a wide range of applications, from automotive and industrial to commercial applications. It offers high speed and high temperature operation, as well as a low on-resistance value, making it ideal for power applications. Additionally, it utilizes a superjunction structure, which allows for higher current capacity and faster switching speeds. The SUD50N03-09P-E3 can be a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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