SUD50N03-09P-E3 Allicdata Electronics

SUD50N03-09P-E3 Discrete Semiconductor Products

Allicdata Part #:

SUD50N03-09P-E3TR-ND

Manufacturer Part#:

SUD50N03-09P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 63A TO252
More Detail: N-Channel 30V 63A (Tc) 7.5W (Ta), 65.2W (Tc) Surfa...
DataSheet: SUD50N03-09P-E3 datasheetSUD50N03-09P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.5W (Ta), 65.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SUD50N03-09P-E3 is a small-signal single N-Channel MOSFET. It can operate at high speed and in high temperatures, making it a great choice for use in many applications. This device has a wide range of uses, from automotive, industrial, and commercial applications. In this article, we will discuss the application field and working principle of the SUD50N03-09P-E3.

Application Field

The SUD50N03-09P-E3 has a maximum drain-source voltage of 50V, a maximum drain current of 6A, and a maximum power dissipation of 735mW. This makes it suitable for a wide range of applications, such as:

  • Automotive - power functions like window motors, high/low beams, ABS brakes, and door locks.
  • Industrial - HVAC systems and motor control.
  • Commercial - LED lighting, surveillance cameras, and interface boards.

Working Principle

The SUD50N03-09P-E3 is a single N-Channel MOSFET, which means it uses the MOSFET (metal-oxide semiconductor field-effect transistor) structure. This type of transistor utilizes an electric field to drive current through a channel between the source and the drain. The current flow is controlled by a gate terminal, which can be found at the center of the device. This gate terminal can be manipulated either by a voltage, allowing for an increase in the current flow. Conversely, the voltage can be lowered to reduce the current flow.

The SUD50N03-09P-E3 specifically uses a "superjunction" design, which allows for a higher current capacity. By utilizing a superjunction structure, it can have an on-resistance of just 0.0073 ohms and a total formation, resulting in a maximum current of 6A. Furthermore, the SUD50N03-09P-E3 has a significantly higher switching speed, making it ideal for use in high speed applications.

Conclusion

In conclusion, the SUD50N03-09P-E3 single N-Channel MOSFET is an excellent choice for a wide range of applications, from automotive and industrial to commercial applications. It offers high speed and high temperature operation, as well as a low on-resistance value, making it ideal for power applications. Additionally, it utilizes a superjunction structure, which allows for higher current capacity and faster switching speeds. The SUD50N03-09P-E3 can be a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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