SUD50P04-40P-T4-E3

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The SUD50P04-40P-T4-E3 transistor is a single, enhancement mode Gallium Nitride, HEMT (highelectron-mobility transistor) device, designed for use in high frequency, high-power and high-linearity applications. It is the perfect fit for use in high-frequency switching and amplification circuits, including RF power amplifiers, switching converters, and wide-band amplifiers.

The transistor has an enhanced breakdown voltage (BVDSS of >50V) and operates with a gate threshold voltage of 4V. It also has an extremely high gain of up to 85dB, and an excellent power handling capability with a maximum rating of 40Watts or 40P4E. This makes it suitable for use in a wide range of applications, including RF and microwave power amplifiers, receivers and transmitters, switching circuits and high-frequency signal processing.

The SUD50P04-40P-T4-E3 is a single transistor device, which means it has a single drain, source and gate terminal. This allows it to be used in high frequency and power applications, without the need for extra components. The transistor utilizes a gate-controlled MOSFET structure, which allows the gate bias to control the drain-source current. Thus, the transistor can be either turned on or off as required.

The transistor can be used in applications that require high frequency, high power and high linearity. It is ideal for applications where switching speed is critical, such as switching converters, high-frequency amplifiers and voltage-controlled oscillators. The transistor can also be used in high-frequency amplifier and mixer circuits for RF and microwave applications. It has a high thermal stability and is capable of operating at temperatures up to 150°C.

The transistor is available in a lead-free package that meets RoHS specifications. It is also RoHS compliant and has been tested to meet the requirements of lead-free legislation. The transistor is designed to provide a high-level of reliability, durability and performance. It is a cost-effective solution for use in a wide range of applications.

In conclusion, the SUD50P04-40P-T4-E3 transistor is a single, enhancement mode Gallium Nitride, HEMT transistor device designed for use in high frequency, high-power and high-linearity applications. It can be used in applications that require high switching speed, and offers a high gain, power platform, and reliability. The transistor is available in a lead-free package that meets RoHS specifications and is RoHS compliant.

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