| Allicdata Part #: | SUD50P04-23-E3-ND |
| Manufacturer Part#: |
SUD50P04-23-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 40V 8.2A TO252 |
| More Detail: | P-Channel 40V 8.2A (Ta), 20A (Tc) 3.1W (Ta), 45.4W... |
| DataSheet: |  SUD50P04-23-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 45.4W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 20V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.2A (Ta), 20A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SUD50P04-23-E3 is a high-performance element in the field of transistors and field-effect transistors (FETs). Specifically, it is a single mono-transistor with an N-type enhancement-mode. This type of transistor is useful in many different applications, due to its ability to amplify current and control conducting and non-conducting states.The SUD50P04-23-E3 is designed to fit into a TO-220 package, and offers low gate-source threshold voltage and very low on-state resistance. This makes it well-suited for use in power applications, such as power supplies, lighting circuits, and motor controls. It is also often used for switching and amplifying current in radio frequency and communications equipment.The working principle of the SUD50P04-23-E3 is that of an N-channel enhancement-mode device. This type of transistor has three terminals: source, gate, and drain. When a negative voltage is applied to the gate terminal, current will flow from the source to the drain. The flow of current is adjusted by controlling the voltage on the gate terminal.When a positive voltage is applied to the gate terminal, it will be strongly attracted towards the P-type material near the drain terminal. This will create a channel along the N-type silicon material and allow current to flow from the source to the drain terminal. The amount of current allowed to flow through the device is regulated by the voltage applied to the gate terminal – the higher the voltage, the more current will flow.In summary, the SUD50P04-23-E3 is a single mono-transistor designed for use in many types of circuits, including power, switching, and communications equipment. Its N-channel enhancement-mode design makes it simple to regulate the flow of current by adjusting the voltage at the gate terminal. Because of its robust features, it is well-suited for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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