SUD50N03-06P-E3 Allicdata Electronics
Allicdata Part #:

SUD50N03-06P-E3-ND

Manufacturer Part#:

SUD50N03-06P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 84A TO252
More Detail: N-Channel 30V 84A (Tc) 8.3W (Ta), 88W (Tc) Surface...
DataSheet: SUD50N03-06P-E3 datasheetSUD50N03-06P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 8.3W (Ta), 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SUD50N03-06P-E3 is a high-performance, N-channel MOSFET (metal-oxide semiconductor field-effect transistor) from STMicroelectronics. It is designed for a wide range of applications, from industrial to automotive, and is a reliable, efficient, and cost-effective power switch. In this article, we will discuss the common applications and working principle of the SUD50N03-06P-E3.

Applications

The SUD50N03-06P-E3 MOSFET is mainly used in power switching applications. It is used as a switch in power supply, motor control, and various other applications. It is especially useful in the automotive industry due to its efficient performance and low cost. It can also be used in:

  • Bipolar and MOSFET switches
  • High-efficiency switching power supplies
  • Lamps and bulbs
  • Portable device and instrument power switching
  • Lighting switches
  • Solar inverter control

Working Principle

The SUD50N03-06P-E3 is an N-channel MOSFET, meaning its gate is controlled by a voltage source. The gate-source voltage controls the flow of current between the source and drain. When the gate-source voltage is 0 volts, the MOSFET is in its "OFF" state and no current flows between the source and drain. When the gate-source voltage is greater than the threshold voltage, the MOSFET turns "ON" and current flows between the source and drain.

The SUD50N03-06P-E3 has a maximum drain-source voltage of 50 volts and a maximum drain current of 3 amps. It also has a maximum drain source on-resistance of 6 ohms. These features make it well suited for applications that require a low resistance, high current flow.

Conclusion

The SUD50N03-06P-E3 is a high-performance, N-channel MOSFET designed for a wide range of applications. It is a reliable, efficient, and cost-effective power switch. It has a maximum drain-source voltage of 50 volts and a maximum drain current of 3 amps, and a maximum drain source on-resistance of 6 ohms. This makes the SUD50N03-06P-E3 well suited for applications that require a low resistance, high current flow.

The specific data is subject to PDF, and the above content is for reference

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