SUD50N04-09H-E3

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The SUD50N04-09H-E3 is a silicon n-channel enhancement type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) produced by STMicroelectronics. This device is well-suited for various applications including switch mode power supplies, motor control, and audio amplifiers. It offers a wide range of features such as high-density cell structure, low on-resistance, and low gate charge.

The SUD50N04-09H-E3 is a single 4 Amp, 30 Volt N-Channel Enhancement Mode MOSFET. It is constructed within a three-terminal package; a gate, drain, and source terminal. It is specifically designed for high-performance switching applications using a variety of topologies including full-bridge, half-bridge, push-pull, and full-bridge configurations. It features RoHS-compliant through-hole version available for a variety of applications.

The working principle of a MOSFET is based on the capacitive coupling of a small conducting gate electrode to a large conducting channel formed underneath it. When a positive voltage is applied to the gate terminal, it creates a small electric field which attracts majority carriers (electrons in n-channel MOSFETs) and depletes majority carriers from the channel region. This enables a controlled flow of electrons through the device which is in proportion to the strength of the electric field applied to the gate terminal.

The SUD50N04-09H-E3 is well-suited for a variety of switch mode power supplies, motor control, audio amplifiers, and other load switching applications. Its low-gate charge and low-on-resistance make it particularly attractive for SMPS applications due to their ability to reduce power losses. In addition, their small size and high-density cell structure make them an excellent choice for space-sensitive applications. It is also ideally suited for use in half-bridge, push-pull, and full-bridge topologies.

The SUD50N04-09H-E3 is an ideal choice for a wide range of applications due to its low on-resistance, high-density cell structure, and low gate charge. It is ideal for switching applications, including switch-mode power supplies, motor control, and audio amplifiers, due to its low-gate charge and low-on-resistance. Its small size and high-density cell structure make it an excellent choice for space-sensitive applications, particularly for half-bridge, push-pull, and full-bridge topologies. In addition, its RoHS-compliant through-hole version is available for a variety of applications, making it a reliable and cost-effective solution.

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