SUD50P04-09L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD50P04-09L-E3TR-ND |
Manufacturer Part#: |
SUD50P04-09L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 50A TO252 |
More Detail: | P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface ... |
DataSheet: | SUD50P04-09L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SUD50P04-09L-E3 is a single-piece MOSFET designed for use in electronic devices for the purpose of controlling power. It is a type of field-effect transistor, or FET, and its name stands for Silicon Unipolar Drain 50V power MOSFETs. It offers significant advantages over traditional transistors in terms of operating voltage, current handling capability, and efficiency.
Applications
The SUD50P04-09L-E3 is most commonly used as a switch in applications such as power amplification, motor control, and other power switching applications. It is also useful in providing current regulation, voltage regulation, and noise suppression in power supplies. It is often used in compact, space-constrained applications such as laptop computers, cell phones, portable audio equipment, and other battery-powered electronic devices.
Working Principle
The working principle of the SUD50P04-09L-E3 is based on the principle of a field-effect transistor (FET). It is composed of a channel of semiconductor material, such as silicon, with a ‘gate’ at one end. This gate controls the flow of charge carriers, such as electrons, through the channel. When a voltage is applied to the gate, a ‘channel’ is formed that allows current to flow through the transistor. The amount of current that can flow through the transistor depends on the amount of voltage applied to the gate.
The gate is connected to the drain and source of the transistor. When the voltage applied to the gate is positive, charges carriers are repelled from the gate to the source and the amount of current that flows through the transistor is decreased. When the voltage applied to the gate is negative, charges carriers are attracted to the gate and the amount of current that flows through the transistor is increased.
The SUD50P04-09L-E3 has an operating voltage of 50V, which makes it suitable for use in applications that require higher voltages. It also has a low on-resistance, which allows for greater current handling capability and efficiency. The SUD50P04-09L-E3 is capable of withstanding high temperatures, which makes it suitable for use in applications that require a high level of reliability.
Conclusion
The SUD50P04-09L-E3 is an ideal solution for power switching applications and other compact, space-constrained applications. It offers low on-resistance and high current handling capability, as well as excellent temperature stability. With its high operating voltage, it is suitable for use in applications that require higher voltage levels. It is an efficient, reliable, and cost-effective solution for many different types of electronic devices.
The specific data is subject to PDF, and the above content is for reference
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