SUD50P06-15L-E3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUD50P06-15L-E3 is a high-performance N-channel MOSFET designed for use in power-management and general-purpose switching applications. The device is built using a powerful DMOS FET technology, which means that it has a very low on-resistance and a high voltage tolerance along with excellent switching and linear performance.

The SUD50P06-15L-E3 is designed for use in a wide range of systems, including automotive, industrial, communications, and consumer electronics applications. It can be used as a power switch or as an electronic load switch. It is also suitable for high-efficiency switching applications with low power consumption and high reliability.

The SUD50P06-15L-E3 is part of a family of high-performance MOSFETS that are designed to provide an optimal balance of low on-resistance and high-voltage tolerance. The device is also designed to provide excellent transient thermal performance. In addition, the device features an integrated ESD protection diode for enhanced protection against ESD events.

The SUD50P06-15L-E3 is designed to operate with a gate-source voltage of +-5V and a drain-source voltage of +-15V. The device is capable of handling up to 25 amps of continuous drain current and a maximum pulse drain current of 50 amps.

The working principle of the SUD50P06-15L-E3 is based on the principle of the field-effect transistor (FET). The MOSFET is a transistor in which the current flow is controlled by a voltage signal applied to a gate terminal. The gate signal creates an electric field that modulates the current flow between the drain and source terminals.

When the gate-source voltage is low, the electric field at the drain-source will be blocked and the device will be off, i.e. no current will flow from the drain to the source. When the gate-source voltage is increased, the electric field at the drain-source will be weakened and the device will be on, i.e. current will flow from the drain to the source.

The SUD50P06-15L-E3 has a parasitic capacitance between the gate and the source, which must be taken into account in high-speed switching applications. The gate charge and switching time also need to be considered, as they will affect the device\'s performance.

In summary, the SUD50P06-15L-E3 is a high-performance N-channel MOSFET designed for use in power-management and general-purpose switching applications. The device is built using a powerful DMOS FET technology, which means that it has a very low on-resistance and a high voltage tolerance along with excellent switching and linear performance. The device operates with a gate-source voltage of +-5V and a drain-source voltage of +-15V and is capable of handling up to 25 amps of continuous drain current and a maximum pulse drain current of 50 amps. The working principle of the device is based on the principle of the field-effect transistor.

The specific data is subject to PDF, and the above content is for reference