SUD50N04-05L-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUD50N04-05L-E3 is an enhancement-mode, N-Channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It belongs to the family of Single MOSFETs, used in many electronic designs in both the consumer level and professional level areas.

For a deeper understanding of the SUD50N04-05L-E3, it is important to go over its application fields and working principle. But before getting into further details about its use, it is important to understand the physical aspect of it. It has an outer shell that consists of a metal material, like copper or aluminum, and on its surface a layer of oxide is present that can differ in composition and thickness. This oxide layer is what separates the MOS from other transistors, as it creates a gate that acts as an electrically insulated gate while allowing electricity to pass through on either side.

The SUD50N04-05L-E3 is a popular choice due to its flexibility and versatility. It has a drain-source voltage of 50 volts and is able to handle up to 5 amps of current when in full operation. It can also be used in applications in which the gate requires a very low voltage, making it an ideal choice when you need a low-power solution. This MOSFET can also be used in various analog applications as it has very low noise levels, making it great for high-resolution audio and video tasks. Finally, it can also be used in digital applications as it has a very fast switching speed, making it much more versatile than other types of transistors.

In terms of its application fields, the SUD50N04-05L-E3 can be used for current regulation and limiting, DC–DC converters, motor drives, and low-power switching. It can also be used in video and audio projects, clocking and control circuits, as well as any other circuit that requires a low-voltage, low-current and fast switching solution.

The working principle of the SUD50N04-05L-E3 is relatively simple. When the gate voltage is low, electrons will not be able to pass through the MOS transistor since the gate voltage is not high enough to let the electrons pass. However, when the gate voltage increases, electrons will start to flow through, creating a current in the form of a drain current from the Drain terminal to the Source terminal, thus allowing electricity to pass through the MOS transistor.

In conclusion, the SUD50N04-05L-E3 is an ideal choice for a variety of tasks, thanks to its flexibility, low voltage requirements and fast switching speed. It is useful in many applications and can be used in both analog and digital projects. Its working principle is based on a simple relationship between the gate voltage and the electron flow through the MOS transistor.

The specific data is subject to PDF, and the above content is for reference