SUD50N06-07L-E3 Discrete Semiconductor Products

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SUD50N06-07L-E3 is a high voltage and power MOSFET manufactured by Infineon Technologies. It is part of their unique CoolMOS power MOSFET product line, which combines cutting-edge technologies, improved performance, and lower on-resistance to bring greater efficiency than other MOSFET solutions. The SUD50N06-07L-E3 has a maximum drain source voltage of 500V, a total gate charge of 6.7nC, an unclamped energy of 200mJ, and a maximum RDS(on) of 95mΩ. Its unique performance characteristics make it suitable for a wide variety of applications, such as for use in automotive, consumer electronics, industrial, and telecoms. It is also used in power supply, motor controller, and battery management circuits.

Application Fields

The SUD50N06-07L-E3 is ideal for use in many automotive automotive applications, such as controlling the current in starter and alternator systems, for fuel-injector systems, ignition coils, power steering, and power seats. It is also suitable for high temperature operating conditions, such as for use in braking systems and electric vehicle (EV) cockpits. It can also be used in other consumer applications, such as in white goods, display controllers, and “Internet of Things” products, amongst others.

In the industrial segment, the SUD50N06-07L-E3 is used in motor control applications, such as in frequency converters, AC motor drivers, and servo motor controllers. It is also used in UPS systems, relays, and welding technology. It is suitable for use in telecom base station operations and in battery management systems.

Working Principle

The SUD50N06-07L-E3 is an enhancement type MOSFET, or eMOSFET. This type of component utilises a gate radius (RG) which is designed to be much wider than a standard MOSFET. This reduces the capacitance between the gate and drain, allowing for faster switching. The gate charge of the SUD50N06-07L-E3 is 6.7nC, and it also has an inherent low on-resistance of 95mΩ.

The eMOSFET design also allows for improved switching behaviour. The output voltage and current are proportional to each other (V=IR). This means that the SUD50N06-07L-E3 is able to operate at higher currents than a standard MOSFET, meaning it is more efficient in applications with high currents. The eMOSFET can also handle higher voltages, meaning it is more suitable for applications in which voltage spikes occur.

In addition, the SUD50N06-07L-E3 has some other characteristics which increase its efficiency. It has a maximum unclamped energy of up to 200mJ, meaning it can handle large current pulses with no loss. It also has a low gate charge, meaning it can be switched quickly and with less heat.

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