SUD50P04-13L-GE3 Discrete Semiconductor Products

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The SUD50P04-13L-GE3 transistor is a P-channel enhancement-mode vertical DMOS FET (V-DMOS) that is employed in high-side and low-side switches and load drivers. It is mainly used in load switching applications such as power management in mobile phones, notebook computers, and home appliances, as well as in motor control, DC-DC converters, and automotive applications.

A V-DMOS transistor has two “m” regions with one on top of the other, as opposed to the single “m” region in an ordinary DMOS FET. The SUD50P04-13L-GE3 transistor is made of multiple epitaxial layers of N- and P-type silicon, and has the “m” regions fabricated from the same semiconductor material, making it much sturdier than ordinary DMOS transistors. The semiconductor material should be rough and have uniform doping, so that when the transistor is subjected to a high electric field, it can resist current surge and voltage breakdown more effectively than ordinary DMOS transistors. Moreover, the SUD50P04-13L-GE3 is particularly suitable for high-side and low-side switch and load driver applications due to its low on-resistance, good thermal resistance, high reliability, and great surge current resistance.

The structure of the P-channel SUD50P04-13L-GE3 is fairly simple and follows the traditional MOSFET structure. Its construction begins with a low resistivity substrate, on which is etched the drain and source before forming the gate. After the gate formation and connection to the source, a protective silicate glass layer is deposited on top of the semiconductor material. This layer also works as an anti-oxidizing agent, preventing the gate from corroding due to moisture and other environmental factors.

The working principle of the SUD50P04-13L-GE3 is as follows. When a positive voltage is applied to the gate, an electric field is created within the transistor body between the drain and source, which results in a current flowing from the drain to the source. The amount of current that can flow through the transistor depends on the relative sizes and doping of the “m” regions, the gate and substrate biasing, and the resistance of the source and drain. The higher the gate voltage, the higher the source-drain current, which is referred to as the “on” state. When the gate voltage is negative, the electric field is reduced or eliminated, and the source-drain current is reduced or eliminated, which is referred to as the “off” state.

In order to ensure proper operation, the drain, source and substrate of the SUD50P04-13L-GE3 transistor should be biased accordingly. Most commonly, the positive drain is connected to the positive supply voltage, the negative source is connected to the ground, and the substrate is biased with a negative voltage. It is important to note that in some applications, the drain and source can be reversed as long as the drain-source voltage is not exceeded.

The SUD50P04-13L-GE3 is an excellent tool for load switching applications in mobile phones, notebooks, home appliances, motor control, DC-DC converters and automotive applications that require high-side or low-side switches and load drivers. Its simple structure, low on-resistance and good thermal resistance makes it the ideal choice for these applications. Furthermore, its high reliability and resistance to current surges make it even more desirable.

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