HUF76407D3ST Discrete Semiconductor Products

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HUF76407D3ST is a high voltage, high speed, ultra-thin and ultra-small wafer surface mounting Power MOSFET, which is typically designed to be used with a wide range of applications. This device feature low gate charge, low gate resistance and high current capability. It is a highly efficient, low-cost, power switch, providing the designer with the best combination of performance and cost. The HUF76407D3ST has a wide range of applications, including power management in industrial, automotive and communication systems.

The HUF76407D3ST MOSFET’s normal (ON) state is characterized by its drain-source channel with a source channel resistance (RDS) of 0.86 ohms and a maximum drain current of 125A. Additionally, its breakdown voltage is equal to 42V and its avalanche energy at 55V is equal to 4mj. The maximum Drain-Source On-State Resistance is 8.6mΩ, compared to conventional planar MOSFETs and the Drain-Source leakagey current (Di/Dt) is equal to 20 µA/µs.

The HUF76407D3ST is constructed on a single silicon wafer, which is composed of a number of microscopic transistors that are arranged in a specific structure. Each transistor is composed of three terminals: two current-carrying terminals called "source" and "drain" and a metal gate that controls the connection between the source and drain. When the voltage applied to the metal gate is larger than the threshold voltage of the device, the transistor is turned “ON” and current can flow between the source and drain. Otherwise, the transistor is turned “OFF” and no current will flow between the source and drain.

The working principle of the HUF76407D3ST is based on a MOSFET (metal oxide semiconductor Field Effect Transistor). It is an insulated gate bipolar transistor formed from the layered structure of a source, a drain, an oxide layer and a gate, through which a voltage is applied. Unlike standard transistors, the Gate terminal of a MOSFET is insulated from the current-carrying terminals, which means they can operate without any leakage or cross-talk. When a positive voltage is applied to the gate terminal, it attracts electrons and creates an electric field that turns the transistor “ON”. When the voltage is removed, the transistor is automatically turned “OFF”. The switching speed of the HUF76407D3ST is very fast, making it suitable for high-speed switching applications.

Additionally, the HUF76407D3ST MOSFEThas low input capacitance, low on-state resistance, low gate charge and high gate drive current. This comes in handy when it is used to control electrical appliances like electric motors, lamps and other electronic devices as it decreases energy losses and improve efficiency. It is also used to provide a level of isolation and radio frequency protection against external signals in areas such as DC-DC converters and high-voltage circuit design.

The HUF76407D3ST is widely used in the fields of industrial automation, telecommunication and in motor-control circuits. It is capable of performing switching at high current and voltage range as well as at high frequency and with high efficiency. This make it one of the most reliable, efficient and cost-effective devices for power modulation and switching applications.

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