| Allicdata Part #: | 497-4819-5-ND |
| Manufacturer Part#: |
STP200NF04L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 40V 120A TO-220 |
| More Detail: | N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  STP200NF04L Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | STripFET™ II |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 4.5V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 6400pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
Description
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The STP200NF04L is a high voltage and fast switching N-channel enhancement mode field effect transistor. It is manufactured by STMicroelectronics and can deliver up to 100A of continuous drain current and up to 200V of drain-source break down voltage. This MOSFET device is well suited for various applications including power home appliances and industrial motor drives.STP200NF04L ApplicationsThe STP200NF04L is ideal for switching power in many high power applications including motor control, switched mode power supplies and power converters. It can be used to provide bidirectional control of current in motor control applications such as gate drivers and motor controllers. The MOSFET can be used to provide high current capabilities in high power inverter systems where space is limited or a short circuit protection is desired. The device is also well suited for switch power supplies, machine automation and factory automation.Working PrincipleThe STP200NF04L has an N-channel enhancement mode Field Effect Transistor (FET) which consists of a source, drain and gate. The gate acts as a control electrode and can be used to control the flow of electrons from the source to the drain. The device is activated by applying a voltage between the gate and source. When the gate voltage is higher than the threshold voltage of the device, a channel of electron carriers is created between the source and drain, enabling the current to flow through the channel.The operation of the STP200NF04L is based on the principle of bulk carrier injection, a phenomenon where carriers can be injected into the weakly doped p-channel region, and across the thin dielectric layer of the MOSFET. When a voltage is applied to the gate, the injected carriers create an inversion region at the source-drain junction which separates the source and drain, allowing current flow to occur. The inversion layer can be further enhanced by increasing the gate voltage, allowing for higher levels of current usability. In addition, the low on-state resistance of the STP200NF04L allows for faster switching speeds to be achieved.ConclusionThe STP200NF04L is an excellent high voltage, fast switching N-channel MOSFET which is well suited for various applications including motor control, switched mode power supplies and power converters. It is based on the principle of bulk carrier injection and can provide a high current capability in high power inverter systems as well as superior switching speeds. The STP200NF04L is an excellent choice for applications requiring high power and high efficiency.The specific data is subject to PDF, and the above content is for reference
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