Allicdata Part #: | 497-4374-5-ND |
Manufacturer Part#: |
STP20NF06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 20A TO-220 |
More Detail: | N-Channel 60V 20A (Tc) 60W (Tc) Through Hole TO-22... |
DataSheet: | STP20NF06 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The STP 20NF06 is a N-channel Logic Level PowerMESH MOSFET that is designed for use in a wide range of applications. It is a high-speed switching transistor that operates at frequencies up to 25MHz with a low gate-source capacitance. The STP 20NF06 is capable of handling load currents up to 10A and is capable of blocking voltages up to 200V.
The STP 20NF06 is used in a wide range of applications, including power management, high speed switching, voltage regulation, and audio amplification. In power management, it can be used to switch high current loads accurately and efficiently. It is also used in high speed switching applications, such as those that require low gate-source capacitance for high frequency operation and fast switching times. The STP 20NF06 can also be used in voltage regulation applications, as it offers excellent rDS(on) performance, making it ideal for controlling voltage levels in a circuit.
The working principle of the STP 20NF06 is fairly simple. When a voltage is applied to the gate, it creates an electrical field that is applied to the source and drain regions of the MOSFET, allowing the flow of current between these two regions. The amount of current that can flow between the source and drain is determined by the gate-source voltage, which is proportional to the voltage applied to the gate.
The STP 20NF06 is a Logic Level PowerMESH MOSFET which means that it has an integrated protection circuit that helps to prevent the device from being damaged by excessive current or voltage. This protection circuit is useful in a wide range of applications, such as power management, where frequent transients can occur. The protection circuit is also important for audio applications, where it can help prevent distortion.
In conclusion, the STP 20NF06 is a high-speed MOSFET that is designed for use in a wide range of applications. It is capable of handling currents up to 10A and can block voltages up to 200V. The STP 20NF06 also has an integrated protection circuit that helps to prevent the device from being damaged due to excessive current or voltage. Furthermore, its low gate-source capacitance makes it ideal for high speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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